Design and performance of the low noise cascode IC for wireless applications

“…The probe combines the usage of a Low Noise Amplifier (LNA) from the OMMIC foundry [5], a broadband branch line coupler and a quarter-wave bazooka balun on the antenna for use in near field scanning. The performance of the prototype probe was evaluated by measuring the Ez component of a micro-strip line on an automated XY scanning system.…”

Section: Introductionmentioning

confidence: 99%

Balanced Active Probe for Near Field Scanning

König

Low

Jastrzebski

et al. 2006

2006 International Conference on Microwaves, Radar &Amp; Wireless Communications

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“…Such components are very compact (few square millimetres) and therefore minimize losses and temperature variations. The employed fabrication processes can achieve amplifiers with noise figure below NF<0.5 dB with high gain resulting in excellent radiometer performance (Dabrowski et al, 2004). However, these devices are either large and operate at cryogenic temperatures or are relatively narrowband.…”

Section: Microwave Radio Thermometry (Mrt)mentioning

confidence: 99%

Non-Invasive Devices for Early Detection of Breast Tissue Oncological Abnormalities Using Microwave Radio Thermometry

Shah¹,

Σιώρης²,

Daskalakis³

2011

Advances in Cancer Therapy

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From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit

Osmanoglu

Özbay

2021

Int J Numerical Modelling

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This paper describes an air cavity quad‐flat no‐leads (QFN) over‐molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier (LNA) design is based on a model of a concept transistor, the cascode transistor used in the design, that has not been fabricated previously. The concept transistor is fabricated for the first time along with the GaN LNA MMIC. The fabricated GaN LNA MMIC is housed in a 12‐lead 3 × 3 mm2 air cavity QFN over‐molded plastic package and mounted on an application board. The measurements taken with the application board represent a good convergence with the design that is based on a concept transistor model. The measurement results and 50 Ω internal matching on both ports without the need for additional matching components make this LNA attractive for many applications.

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Design and performance of the low noise cascode IC for wireless applications

Cited by 4 publications

References 4 publications

Balanced Active Probe for Near Field Scanning

Balanced Active Probe for Near Field Scanning

Non-Invasive Devices for Early Detection of Breast Tissue Oncological Abnormalities Using Microwave Radio Thermometry

From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit

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