Design And Performance Of Blocked-Impurity-Band Detector Focal Plane Arrays

Stetson, S.; Reynolds, David; Stapelbroek, M. G.; Stermer, R. L.

doi:10.1117/12.936525

Cited by 55 publications

(10 citation statements)

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“…Most of the BIB detectors were fabricated using Si and Ge materials. In Si BIB detectors, As and Sb (Stetson et al, 1986;Reynolds et al, 1989; Wavelength ( Exp. data…”

Section: Bib Detectors For Terahertz Applicationsmentioning

confidence: 99%

Terahertz Detection Devices

Perera

Ariyawansa

Matsik

2011

Comprehensive Semiconductor Science and Technology

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“…Most of the BIB detectors were fabricated using Si and Ge materials. In Si BIB detectors, As and Sb (Stetson et al, 1986;Reynolds et al, 1989; Wavelength ( Exp. data…”

Section: Bib Detectors For Terahertz Applicationsmentioning

confidence: 99%

Terahertz Detection Devices

Perera

Ariyawansa

Matsik

2011

Comprehensive Semiconductor Science and Technology

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“…Electromagnetic waves in a wavelength range of ∼ 1 µm-300 µm are widely used in infrared imaging, security inspection, earth observation, infrared astrophysics, extraterrestrial life science, and other fields. [1][2][3][4][5] A variety of detection technologies have been developed in order to meet various demands. [6][7][8] Generally speaking, infrared and terahertz detectors working in this frequency range can be divided into photoelectric devices and thermoelectric devices according to their working principles.…”

Section: Introductionmentioning

confidence: 99%

High performance infrared detectors compatible with CMOS-circuit process*

Wang¹,

Li²,

Dai³

et al. 2021

Chinese Phys. B

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A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current (DC) bias voltage of –2.3 V, the device detectivity to blackbody irradiation is as high as 5 × 1013cm⋅Hz1/2/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost.

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“…The test results presented here reflect those results with the aim of finding detectors that will enable FORCAST to meet its scientific goals at ì first lightî . The FORCAST arrays are blocked impurity band [4][5][6][7][8][9] (BIB) devices designed as moderate to high background flux (MF/HF) arrays, with a changeable integration capacitances (factor of 10) to accommodate variation in background irradiance levels − variation of spectral resolution with observing mode, for example. DRS Technologies (formerly Boeing North American) has previously developed successful detectors for ground-based and airborne astronomical instruments, including SpectroCam-10 10 at the Palomar 5-meter telescope, KEGS 11 (Kuiper Airborne Observatory Echelle Grating Spectrograph) and KWIC 12 (Kuiper Airborne Observatory Wide-field Infrared Camera), and the Very Large Telescope Imager and Spectrometer for Mid-infrared 13 (VISIR).…”

Section: Introductionmentioning

confidence: 99%

Testing of mid-infrared detector arrays for FORCAST

et al. 2004

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This paper presents results on performance testing of mid-infrared detector arrays for the Faint Object Infrared Camera for the SOFIA Telescope (FORCAST). FORCAST is a two-channel camera that utilizes a Si:As blocked impurity band (BIB) 256 × 256 detector array for imaging through discrete filters at 5 -25 microns, and a Si:Sb BIB 256 × 256 detector array for imaging at 25 -40 microns, over a 3.2' × 3.2' field of view, under high thermal background conditions. DRS Technologies has designed and fabricated several Si:As BIB and Si:Sb BIB engineering grade detector arrays which we test as candidate arrays for FORCAST. We present their initial laboratory test performance results.

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Design And Performance Of Blocked-Impurity-Band Detector Focal Plane Arrays

Cited by 55 publications

References 0 publications

Terahertz Detection Devices

Terahertz Detection Devices

High performance infrared detectors compatible with CMOS-circuit process*

Testing of mid-infrared detector arrays for FORCAST

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