Design and performance of a vertical cavity surface emitting laser based on III-V quaternary semiconductor alloys for operation at 1.55 μm

Linnik, M.; Christou, A.

doi:10.1109/16.954459

Cited by 15 publications

(5 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…R depends on (i) the refractive index difference (or contrast, Dn) between the alternating high-and low-bandgap layers, and (ii) the number of pairs of quarter-wave layers. An improvement in Dn of the quarter-wave stack leads to a better DBR with few layers [2]. Furthermore, lower Dn implies larger penetration of the optical wave into the DBR and, therefore, larger mirror loss due to free-carrier absorption and scattering at the interfaces [3].…”

Section: Mirror Design For Sesams At 155 Lmmentioning

confidence: 99%

Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector

Vainionpaa

Suomalainen

Isomäki

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Mirror Design For Sesams At 155 Lmmentioning

confidence: 99%

Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector

Vainionpaa

Suomalainen

Isomäki

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

“…A large number of pairs are required to obtain high reflectivity with a small index contrast. For instance, GaInAsP/InP DBRs and AlGaInAs/InP DBRs were used for InP-based VCSELs, and more than 50 pairs are needed to make reflectivity up to 99% [3][4][5]. Too many pairs make the growth process for high quality mirror structures very difficult, and waste a lot of growth time.…”

Section: Laser Physics Lettersmentioning

confidence: 99%

Mirror design for long-wavelength vertical-cavity surface-emitting lasers

Wang¹,

Cheng

Hu³

et al. 2017

Laser Phys. Lett.

View full text Add to dashboard Cite

A kind of bottom mirror, fabricated using a nano-scale epitaxy method, is proposed for long-wavelength InP-based vertical-cavity surface-emitting lasers (VCSELs). The design of the bottom mirror combines the conventional dielectric distributed Bragg reflector structure with a fabrication procedure using nano-scale epitaxial lateral overgrowth (ELO). Hence, this ELO mirror structure can provide both a high reflectivity, to form an optical resonance cavity, and a virtual InP substrate for the growth of high quality active regions in the VCSEL. The dependence of the reflectivity on the epitaxial lateral overgrowth mirror structure parameters is analyzed in detail using numerical methods. The results demonstrate that a stopband at more than 99% reflectivity is achieved in the wavelength range from 1.49 to 2.09 µm, and the threshold optical gain can be as low as 202, 257, and 311 cm−1 for the internal loss coefficients of 10, 15 and 20 cm−1.

show abstract

“…As the last example, the present method is used to analyze the InP-based multiple quantum well (MQW) rib waveguide. To date, the InP-based MQW material system has been widely applied to electroabsorption modulators (EAMs), directional coupler (DC)/Mach-Zehnder (MZ)/multimode interference (MMI) optical switches/modulators (OS/Ms), and semiconductor lasers due to its good quantum confined Stark effect (QCSE) at 1.55 µm window [1,[20][21][22][23][24] . Both passive and active photonic/optoelectronic devices can be realized by using this material system, thus it is a good candidate for PLCs/PICs.…”

Section: Inp-based Multiple Quantum Well Rib Waveguidementioning

confidence: 99%

An improved three-dimensional full-vectorial finite-difference imaginary-distance beam propagation method

Xiao

Cai

et al. 2006

SCI CHINA SER F

View full text Add to dashboard Cite

A modified alternating direction implicit approach is proposed to discretize the three-dimensional full-vectorial beam propagation method (3D-FV-BPM) formulation along the longitudinal direction. The cross-coupling terms (CCTs) are neglected at the first substep, and then double used at the second substep. The order of two substeps is reversed for each transverse electric field component so that the CCTs are always expressed in an implicit form, thus the calculation is efficient and stable. Based on the multinomial interpolation, a universal finite difference scheme with a high accuracy is developed to approximate the 3D-FV-BPM formulation along the transverse directions, in which the discontinuities of the normal components of the electric field across the abrupt dielectric interfaces are taken into account and can be applied to both uniform and non-uniform grids. The corresponding imaginary-distance procedure is first applied to a buried rectangular and a GaAs-based deeply-etched rib waveguide. The field patterns and the normalized propagation constants of the fundamental and the first order modes are presented and the hybrid nature of the full-vectorial guided-modes is demonstrated, which shows the validity and utility of the present approach. Then the modal characteristics of the deeply-and shallow-etched rib waveguides based on the InGaAsp/InGaAsP strained multiple quantum wells in InP substrate are investigated in detail. The results are necessary for modeling and the design of the planar lightwave circuits or photonic integrated circuits based on these waveguides.

show abstract

Design and performance of a vertical cavity surface emitting laser based on III-V quaternary semiconductor alloys for operation at 1.55 μm

Cited by 15 publications

References 40 publications

Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector

Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector

Mirror design for long-wavelength vertical-cavity surface-emitting lasers

An improved three-dimensional full-vectorial finite-difference imaginary-distance beam propagation method

Contact Info

Product

Resources

About