Design and performance evaluation of a DC-DC buck-boost converter with cascode GaN FET, SiC JFET, and Si IGBT power devices

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad A.

doi:10.1109/naps.2017.8107322

Cited by 8 publications

(4 citation statements)

References 29 publications

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“…This topology increases the power density while also integrating gate controller, which allows extremely high switching speeds to be achieved by reduction of parasitic capacitances and inductances (Amano et al 2018). They outperform other high voltage transistor topologies due to significantly lower drain-source resistance (Alharbi et al 2017;Roig et al 2017;Shah et al 2018). However, the maximum drain-source voltage of GaN FET transistors is up to 600 V, and the series connection of the transistors for high voltage stress distribution is complicated by the low internal capacity of these transistors (Roig et al 2017).…”

Section: Overview Of the Principle And Problems Of Pockels Cellsmentioning

confidence: 99%

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Sinkevičius¹

2021

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Vilnius, 2021 Disertacija rengta 2017-2021 metais Valstybiniame mokslinių tyrimų institute Fizinių ir technologijos mokslų centre. Vadovas prof. dr. Algirdas BAŠKYS (Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras, elektros ir elektronikos inžinerija -T 001). Vilniaus Gedimino technikos universiteto elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. dr. Dalius NAVAKAUSKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija -T 001). Nariai: doc. dr. Aidas MATIJOŠIUS (Vilniaus universitetas, fizika -N 002), prof. dr. Jurij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija -T 001), dr. Iouliia SKLIAROVA (Aveiro universitetas, Portugalija, elektros ir elektronikos inžinerija -T 001), prof. dr. Algirdas SUŽIEDĖLIS (Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras, fizika -N 002). Disertacija bus ginama viešame Elektros ir elektronikos mokslo krypties disertacijos gynimo tarybos posėdyje 2021 m. lapkričio 9 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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Section: Overview Of the Principle And Problems Of Pockels Cellsmentioning

confidence: 99%

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Sinkevičius¹

2021

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“…Parameter values are taken from Formisano et al (2021), Anthon et al (2015); and Subhashree et al (2019) for L boost and C boost ; from Wei et al (2019), Subhashree et al (2019); Touss et al (2020); and Wang et al (2019) for L buck and C buck ; from Dimitrov et al (2020) and Mohammeda et al (2019) for L buck–boost and C buck–boost , with IGBT technology; and finally from Alharbi (2017); López del Moral et al (2018); and Raj et al (2020) for L buck–boost and C buck–boost with SiC-MOSFET technology.…”

Section: Modellingmentioning

confidence: 99%

Impact of nearby lightning on photovoltaic modules converters

Barmada

Formisano

Hernández

et al. 2021

COMPEL

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Purpose The lightning phenomenon is one of the main threats in photovoltaic (PV) applications. Suitable protection systems avoid major damages from direct strikes but also nearby strikes may induce overvoltage transients in the module itself and in the power conditioning circuitry, which can permanently damage the system. The effects on the PV system sensibly depend on the converter topology and on the adopted power switch. In the present study, a comparative analysis of the transient response due to a nearby lightning strike (LS) is carried out for three PV systems, each equipped with a different converter, namely, boost, buck and buck–boost, based on either silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFET) or insulated gate bipolar transistors controlled power switch devices, allowing in this way an analysis at different switching frequencies. The purpose of this paper is to present the results of the numerical analysis to help the design of suited protection systems. Design/methodology/approach Using a recently introduced three-dimensional semi-analytical method to simulate the electromagnetic transients caused in PV modules by nearby LSs, we investigate numerically the effect of a LS on the electronic circuits connecting the module to the alternate current (AC) power systems. This study adopts numerical simulations because experimental analyses are not easy to perform and does not grant a sufficient coverage of all statistically relevant aspects. The approach was validated in a previous paper against available experimental data. Findings It is found that the load voltage is not severely interested by the strike effects, thanks to the low pass filters present at the converter output, whereas a relatively high overvoltage develops between the negative pin of the inner circuitry and the “ground” voltage reference. The overcurrent present in the active switches is hardly comparable because of the different topologies and working frequencies; however, the highest overcurrent is observed in the buck converter topology, with SiC MOSFET technology, although it shows the fastest decay. Originality/value This research proposes, to the best of the authors’ knowledge, a comprehensive comparison of the indirect lighting strike effects on the converter connected to PV panels. A proper design of the lightning and surge protection system should take into account such aspects to reduce the risk of induced overvoltage and overcurrent transients.

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“…Academic and industrial researchers have devoted significant efforts and numerous resources to develop and fabricate alternative semiconductor materials with improved characteristics for next-generation power devices due to the limitations of Si devices and an acute global demand for power devices with higher operating capabilities [22], [23]. Emerging wide bandgap (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior material properties than traditional Si materials, enabling power devices to operate effectively under harsh operating conditions [24]- [26]. WGB materials offer outstanding physical properties like a wider energy gap, better thermal conductivity, higher electron mobility, higher saturated velocity, and larger critical electric field [27]- [30].…”

Section: Introductionmentioning

confidence: 99%

Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters

Alharbi

Matin

2021

Trans. Electr. Mach. Syst.

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Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit superior physical properties and demonstrate great potential for replacing conventional silicon (Si) semiconductors with WBG technology, pushing the boundaries of power devices to handle higher blocking voltages, switching frequencies, output power levels, and operating temperatures. However, tradeoffs in switching performance and converter efficiency when substituting GaN devices for Si and SiC counterparts are not well-defined, especially in a cascode configuration. Additional research with further detailed investigation and analysis is necessitated for medium-voltage GaN devices in power converter applications. Therefore, the aim of this research is to experimentally investigate the impact of emerging 650/900 V cascode GaN devices on bidirectional dc-dc converters that are suitable for energy storage and distributed renewable energy systems. Dynamic characteristics of Si, SiC, and cascode GaN power devices are examined through the double-pulse test (DPT) circuit at different gate resistance values, device currents, and DC bus voltages. Furthermore, the switching behavior and energy loss as well as the rate of voltage and current changes over the time are studied and analyzed at various operating conditions. A 500 W experimental converter prototype is implemented to validate the benefits of cascode GaN devices on the converter operation and performance. Comprehensive analysis of the power losses and efficiency improvements for Si-based, SiC-based, and GaN-based converters are performed and evaluated as the switching frequency, working temperature, and output power level are in-creased. The experimental results reveal significant improvements in switching performance and energy efficiency from the emerging cascode GaN devices in the bidirectional converters.

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Design and performance evaluation of a DC-DC buck-boost converter with cascode GaN FET, SiC JFET, and Si IGBT power devices

Cited by 8 publications

References 29 publications

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Pjezoelektrinių virpesių slopinimo pokelso narveliuose tyrimas

Impact of nearby lightning on photovoltaic modules converters

Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters

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