Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Srivastava, Viranjay M.; Yadav, K. S.; Singh, Ghanshyam

doi:10.1016/j.mejo.2010.12.007

Cited by 68 publications

(19 citation statements)

References 34 publications

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“…Hence, DP4T switch is designed to enhance the switching performance of the MIMO applications. This DP4T switch can send or receive two parallel data streams simultaneously means data transfer rate increases "four times" [10][11][12].…”

Section: Antenna Systemmentioning

confidence: 99%

“…Here the purpose is to achieve a minimal work-function difference between the gate and the semiconductor, while maintaining the conductive properties of the gate. Based on the C-V characterization of a RF MOS capacitor with VEE Pro software, which resulted in flawed values of device parameters [11,12], mainly the substrate dopant concentration, on which most of the other parameters are based. The readings stored in excel sheet can be used for further processing and we can utilize this process for DP4T switch.…”

Section: Capacitance-voltage and Capacitance-frequency Characteristicsmentioning

confidence: 99%

“…To fabricate metal-oxide-semiconductor, the silicon wafers were cleaned by following the standard cleaning procedure to remove insoluble organics and metallic contaminants. After that, a layer of oxide, approximately 650 Å thick, was grown on the silicon wafers using a dry oxidation process at 950˚C for 2 hour, with a pre-ramp and post-ramp of 800˚C with N 2 (12) and O 2 (32). For top layer we will use Aluminum due to its ease of processing, ability to reduce native SiO 2 , which is always present in silicon wafers, exposed to atmosphere and its low resistivity.…”

Section: Process For Measurements Of Device Parametersmentioning

confidence: 99%

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Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Srivastava¹,

Yadav²,

Singh³

2011

IJCNS

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To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to -5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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Section: Antenna Systemmentioning

confidence: 99%

Section: Capacitance-voltage and Capacitance-frequency Characteristicsmentioning

confidence: 99%

Section: Process For Measurements Of Device Parametersmentioning

confidence: 99%

See 1 more Smart Citation

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Srivastava¹,

Yadav²,

Singh³

2011

IJCNS

Self Cite

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show abstract

“…Some multi-gate silicon on insulator (SOI) technology has also been proposed for promising solution to replace the conventional MOSFET [3]. However, the cylindrical gate all around (CGAA) MOSFET is one of the new technologieswhich further enables the scaling without hampering the device performance [4] [5].Since due to higher drive current and shorter length, Cylindrical GAA MOSFETs can achieve higher packing density as compared to the other multiple-gate MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Design, Analysis & Simulation of 30 nm Cylindrical Gate all around MOSFET

Sachdeva¹,

Aggarwal²,

Kushwaha³

2016

International Journal of Advanced Research in Computer and Comm

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Cylindrical gate all around (GAA) MOSFET is a drastic invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling without hindering the device performance.In this work, electrical characteristics of cylindrical GAA (CGAA) MOSFET at 50nm channel length (Lg), 10nm channel thickness (t si ) are systematically analysed. Various electrical characteristics such as On current (I ON ), subthreshold leakage current (I OFF ), the threshold voltage (V th ), DIBL are calculated and analysed at various device design parameters.All the device performances of Cylindrical GAA MOSFETs are investigated through Atlas device simulator from Silva co.

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“…The double-gate (DG) MOSFETs are example of this, which are capable for nanoscale integrated circuits due to their enhanced scalability compared to bulk or Si-CMOS [3,4]. When we are using a switch with multiplegates, the behavior of these switches depends on the number of gates, which controls the operational process of the device.…”

mentioning

confidence: 99%

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

2011

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In this paper, we have analyzed a 45-nm RF CMOS switch design technology with the double-pole fourthrow circuit by using independently controlled double-gate MOSFET. The proposed switch reduces the number of transistors and increases the logic density per unit area as compare to the conventional CMOS switch. With the unique independent double-gate properties, we have demonstrated the potential advantages in terms of the drain current, threshold voltage, attenuation with ON resistance, flat-band capacitances, charge density and power dissipation of the proposed switch, which provides a switch with a significant drive circuit that is free from the signal propagation delay and additional voltage power supply. Moreover, the main emphasis is to provide a plurality of such switches arranged in a densely configured switch array, which provides a lesser attenuation, and better isolation with fast switching speed.

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Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Cited by 68 publications

References 34 publications

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Design, Analysis & Simulation of 30 nm Cylindrical Gate all around MOSFET

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

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