Design and performance analysis of wrap-gate CNTFET-based ring oscillators for IoT applications

Jooq, Mohammad Khaleqi Qaleh; Mir, Ali; Mirzakuchaki, Sattar; Farmani, Ali

doi:10.1016/j.vlsi.2019.10.005

Cited by 14 publications

(3 citation statements)

References 56 publications

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“…where ECP is the conduction band minimum of p th subband. The conduction band minima is the difference of p th band energy (Δp) and surface potential (ψs) i.e: E= Δ -qV P CP CNT (11) For one-dimensional structure, the general equation for density of state is given by [22]:…”

Section: Theory and Modelmentioning

confidence: 99%

“…Carbon Nanotubes (CNTs) [4] are very promising material, due to their small size and remarkable electromechanical and thermal properties. Carbon nanotube field effect transistors (CNFETs) are better alternative to replace the Si-MOSFETs [5] due to better control of short channel effects, less propagation delay, high on-off current ratio and less power consumption [6][7][8][9][10][11] in nanometer (nm) dimension for the use in future computing system. In CNFET devices, CNTs are channels between source and drain and the channel current through CNT is controlled by gate terminal.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

Dixit

Gupta

2021

IJE

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Section: Theory and Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

Dixit

Gupta

2021

IJE

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“…Low power mixed-mode active fi lter using 12 CNT and 2 capacitors was presented by Zanjani et al [14]. Jooq et al designed CNTFET based ring oscillators suitable for the internet of things (IoT) applications [17]. Low power CNTFET based RF oscillator is reported in [18].…”

Section: Univerzalni Filtri In Oscilatorji Na Osnovi Napetostnega Tramentioning

confidence: 99%

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology

Mamatov

2021

Informacije MIDEM

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Carbon nanotube fi eld-eff ect transistor (CNTFET) is a strong candidate to replace existing silicon-based transistors. The ballistic transport of electrons in the CNTFET channel leads to ultra-low-power and high-frequency devices. Although a lot of digital applications of CNTTFET were presented, less work was done in analog applications of CNTFETs. This paper presents analog applications of CNTFET and its implementation of voltage diff erencing transconductance amplifi er (VDTA). The CNTFET VDTA based fi lters and oscillators were proposed. The VDTA circuits are resistorless and can be tuned electronically only by changing transconductance. The proposed CNTFET VDTA shows power consumption of 4000 times less than compared to silicon CMOS technology and a signifi cant reduction in chip area. All simulations were performed using SPICE and MATLAB simulation tools.

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A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications

Jooq

Bozorgmehr

Mirzakuchaki

2020

Circuit Theory & Apps

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SummaryOver the past few years, with lower power consumption, reasonable layout area, and the ease of integration with standard circuit design technologies compared to the other counterparts, delay stage ring voltage‐controlled oscillators (VCOs) have been in the limelight of microelectronics scientists. However, few efforts have focused on representing high‐performance delay stage ring VCOs in the deep nanometric regime. In this regard, by virtue of outstanding electrical properties of carbon nanotube wrap‐gate transistors, this work aims to propose a carbon nanotube field‐effect transistor (CNTFET)–based delay stage ring VCO. After performing rigorous simulations, the proposed ring VCO which has been designed by 10‐nm gate‐all‐around (GAA) CNTFET technology shows suitable electrical performance metrics. The simulation results demonstrate that the proposed GAA‐CNTFET‐based ring VCO consumes 85.176 μW at with a 6.12‐ to 10.42‐GHz frequency tuning range. At the worst‐case noise conditions, the proposed design presents ‐90.747 dBc/Hz phase noise at 1 MHz offset frequency. With occupying 1.414 μm2 physical area, the proposed VCO is appropriate for the ultracompact nanoscale radio frequency apparatus. Our simulation results accentuate that with further improvements and commercializing the fabrication techniques for CNTFET transistors, the proposed GAA‐CNTFET‐based VCO can be considered as a potential candidate for X‐band satellite communication applications.

show abstract

Design and performance analysis of wrap-gate CNTFET-based ring oscillators for IoT applications

Cited by 14 publications

References 56 publications

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology

A low‐power delay stage ring VCO based on wrap‐gate CNTFET technology for X‐band satellite communication applications

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