Abstract:This paper presents a new multiple-time programmable (MTP) memory cell that features an n-well as the erasing gate and is implemented in a 16 nm FinFET technology process. It is composed of slot contacts placed beside a metal gate for lateral coupling to the floating gate, while an n-well with a floating gate laid on top of it functions as erasing terminal. With adjusted slot contact length, a programming gate (PG) coupling ratio can be designed for the optimized program, erase and read operations to best meet… Show more
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