Design and optimization of highly efficient perovskite/homojunction SnS tandem solar cells using SCAPS-1D

Jafarzadeh, Farshad; Aghili, Hamed; Nikbakht, Hafez; Javadpour, Sirus

doi:10.1016/j.solener.2022.01.046

Cited by 37 publications

(15 citation statements)

References 56 publications

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“…Currently, the demand for energy increase year by year, which is important for technological and industrial development worldwide although limited fossil fuels 1 . Solar cells are considered one of the highly significant renewable energy sources since they are environmental ecofriendly technology to reduce global CO 2 emissions 1 .…”

Section: Introductionmentioning

confidence: 99%

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

Abdelfatah

Sayed

Ismail

et al. 2023

Sci Rep

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ZrS2 is transition metal dichalcogenides (TMDCs) which is believed one of the most talented applicants to fabricate photovoltaics. Therefore, we present here for the first-time numerical simulation of novel inorganic ZrS2/CuO heterojunction solar cells employing SCAPS-1D. The influence of the thickness, carrier concentration, and bandgap for both the window and absorber layers on the solar cell fundamental parameters was explored intensely. Our results reveal that the solar cell devices performance is mainly affected by many parameters such as the depletion width (Wd), built-in voltage (Vbi), collection length of charge carrier, the minority carrier lifetime, photogenerated current, and recombination rate. The η of 23.8% was achieved as the highest value for our simulated devices with the Voc value of 0.96 V, the Jsc value of 34.2 mA/cm2, and the FF value of 72.2%. Such efficiency was obtained when the CuO band gap, thickness, and carrier concentration were 1.35 eV, 5.5 µm, and above 1018 cm−3, respectively, and for the ZrS2 were 1.4 eV, 1 µm, and less than 1020 cm−3, respectively. Our simulated results indicate that the inorganic ZrS2/CuO heterojunction solar cells are promising to fabricate low-cost, large-scale, and high-efficiency photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

Abdelfatah

Sayed

Ismail

et al. 2023

Sci Rep

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“…The feS 2 -based solar cell under consideration is simulated using a SCAPS-1D device simulator developed by the University of Gent, Belgium [35,36]. This simulator is widely utilized for a realistic device simulation to understand the working of the device through numerical simulation [37][38][39][40][41]. The device structure used in this work is shown in figure 1(a).…”

Section: Device Analysis and Simulationmentioning

confidence: 99%

Inherent internal p-n junction assisted single layered n-type iron pyrite solar cell

Gohri

Madan

Mohammed

et al. 2023

Mater. Res. Express

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The high absorption coefficient and low cost with plentiful availability make the material iron pyrite (FeS2) promising for solar cell applications. However, their efficiency in the literature is still around 2.8% due to their low VOC. The presence of an acceptor-type surface inversion layer (SIL) with a significant band gap (0.56 eV–0.72 eV) is the main cause of this low performance. A detailed study considering these two parameters is not available in the literature to relate device performance to underlying phenomena. Therefore, a comprehensive analysis of the band gap and doping variation of SIL was performed in this article to explore the efficiency potential of FeS2 solar cells. The results showed that SIL with a low bandgap is highly undesirable, and it is recommended to fabricate SIL with a higher band gap of 0.72 eV and a doping of 1019 cm-3 in the laboratory to achieve a conversion efficiency of 5.36%. It was also confirmed that FeS2-based solar cells without a SIL layer have the potential to deliver 10.3% conversion efficiency. The results reported in this study will pave the way for underestimating the workings of iron pyrite solar cells and developing highly efficient FeS2 solar cells.

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“…在本次模拟中，采用正式钙钛矿电池结构，如图 1(a)所示， GaN 作为电子传输层(ETL)、 (FAPbI 3 ) 0.85 (MAPbBr 3 ) 0.15 作为活性层(Active layer)、Spiro-OMeTAD 作为空穴传输层 (Hole transport layer, HTL)， FTO 和 Cu 分别为电池的前电极和背电极，模拟太阳光由 FTO 处入射。活性层与电子传输层之间的能级匹配是影响 ETL 电子传输能力的重要因素 [17,18] ，当两者能级不匹配时，载流子在活性层/电子传输层的界面处的复合过程也会显著增加 [19] ，这将进一步影响钙钛矿电池的性能。图 1b 展示了电池各结构能带，GaN 在电池结构中的较好能带匹配将有利于电子由钙钛矿活性层向 FTO 电极传输。图 1 (a)钙钛矿电池的结构；(b) GaN 层在电池中的理论能带匹配 Alex Niemegeers 等人设计开发 [20] ，主要应用于 CIGS、钙钛矿电池等一些平面薄膜太阳能电池的相关模拟计算 [21][22][23] 。通过求解泊松方程(1)、电子(2)和空穴(3)连续性方程、电子(4) (5) Bandgap (eV) 3.40 [24] 1.55 [11] 3.11…”

Section: 结构和能带unclassified

Theoretical analysis of GaN-based semiconductor in changing performanc of perovskite solar cell

Xiao-li¹,

Qiu²,

Wei³

et al. 2023

Acta Phys. Sin.

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GaN-based semiconductor has been used in optoelectronics and electronic devices. It is a new research topic at present that how to combine its good electrical properties to explore other applications in theory or experiment. In this paper, SCAPS-1D software is used to calculate the theoretical mechanism of GaN electron transport in FTO/GaN/ (FAPbI3)0.85(MAPbBr3) 0.15 /HTL perovskite solar cell (PSC) structure. The results showed that when GaN was used in PSC, the Voc increased from 0.78V to 1.21V, PCE increased from 15.87% to 24.18% and the small conduction band cliff formed between GaN and the active layer could improve the efficiency of the cell. By calculating the Quasi-Fermi level splitting, interfacial electric field, interfacial recombination rate and depletion zone thickness at different doping concentrations and thickens, the influences of GaN thickness and doping concentration on open-circuit voltage and other device parameters were analyzed, and the physical mechanism of GaN as an electron transport layer was discussed. With the increase of the thickness, the Jsc of this solar cell decreased gradually, but the change range was feebleness (24.13 mA/cm2~ 23.83mA/cm2). The Voc decreased from 1.30V to 1.21V when the thickness of GaN exceeded 100nm, and then remained stable. The power conversion efficiency changing regularity of the form of "pits" appears——first decreases, then increases, and finally maintains stability, with the highest efficiency of 24.76% and the corresponding GaN thickness of 245nm.The FF showed a trend of first decreasing, then increasing, and finally leveling off. When the doping concentration and thickness change at the same time, with the increase of doping concentration, the Jsc decreases gradually with the increase of thickness, but the overall change range is small, and the open-circuit voltage, filling factor and conversion efficiency all show "pits" changes. When the thickness of GaN is 200nm, with the concentration of gallium nitride doping increasing, the Quasi Fermi level splitting increasing, and the strength of the built in electric field between the active layer and the GaN layer increases, thus providing a greater driving force for carrier separation, resulting in a larger potential difference Δμ, and thus a larger Voc. With the increase of doping concentration, the recombination rate of the active layer/GaN layer interface and the recombination rate inside the active layer increase, which leads to the decrease of Jsc. It is found that the position of the "Concave point" of Voc under the change of gallium nitride thickness is determined by the variation of GaN doping concentration is determined by the width of GaN depletion region between GaN/FTO, and the width of GaN depletion region between GaN/active layer determines the width of the whole “pit”. In summary, the cell parameters can be improved by simultaneously changing the thickness and doping concentration of GaN.

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Design and optimization of highly efficient perovskite/homojunction SnS tandem solar cells using SCAPS-1D

Cited by 37 publications

References 56 publications

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells

Inherent internal p-n junction assisted single layered n-type iron pyrite solar cell

Theoretical analysis of GaN-based semiconductor in changing performanc of perovskite solar cell

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