Design and optimization of a W-band extended interaction klystron amplifier

Abstract

A three dimension high frequency circuit of an W band extended interaction klystron amplifier (EIA) is designed. With an electron beam of 17 kV and 0.34 A, and an input microwave power of 30 mW at 94.77 GHz, an average power of 580 W with power conversion efficiency of 10.03% , gain of 42.6 dB, 3dB Instantaneous bandwidth of more than 150 MHz is obtained. However, a peak output power of 50 mW is obtained by experiment. Based on the experiment result, optical system and RF circuit are optimized. Via optimization, a beam transmission of 100% is achieved, and with an electron beam of 18 kV and 0.28 A, and an input microwave power of 30 mW at 94.95 GHz, an average power of 374 W is obtained.

G-Band Broad Bandwidth Extended Interaction Klystron with Traveling-Wave Output Structure

“…An EIK designed by the United States Naval Research Laboratory is capable of producing 453 W of power with a gain of 41.6 dB in the Ka-band [16]; they have also produced a G-band EIK with a 7.5 kW power output with a bandwidth of 100 MHz [17]. A W-band EIK produced by the Beijing Vacuum Electronics Research Institute can produce a power output of 5.6 W, and the 3-dB bandwidth is 100 MHz [18].…”