Design and investigation of UV image detectors

Abstract

The results of investigation of optical image detectors designed for the largest problem, near VUV, range of the spectrum are presented. The possibility of using a dual stage image detection system to appre ciably lower the sensitivity threshold and make computer data processing feasible is considered. The integra tion of a UV module into a wideband image detector is studied.

Characterization of boron-doped single-crystal diamond by electrophysical methods (review)

“…For the high-voltage electronics, the diamond-based semiconductor devices can significantly reduce energy consumption and increase limit breakdown voltages, an operating frequency and temperature [7][8][9][10][11]. Low coefficients of adhesion and friction in diamond (as compared to silicon) demonstrate advantages of application of diamond films in microelectromechanical (MEM) devices [12][13][14][15].Undoped diamond can be used to create sensors of charged particles, X-ray and ultraviolet radiation [16][17][18], as well as to create UV photodetectors [19,20]. On the other hand, impurity doping to the ultra-high level in extremely narrow layers (δ-doping) is considered as a real way of creating powerful unipolar transistors [21][22][23][24][25].…”

Characteristics of Solar-Blind Electron-Optical Converters with Diamond Photocathodes

“…A key problem in the development of Vac UV electron-optical converters (Vac UV EOCs) is the development of a solar-blind photocathode. In Russia, solar-blind ultraviolet photocathodes for Vac UV EOCs are being developed by a group of researchers in Zelenograd [4], while UV image receivers based on traditional bi-alkali photocathodes and nonlinear bandpass filters are being developed at the ELEC-TRON Central Research Institute (St. Petersburg) [5] and NPO Katod (Novosibirsk).…”