2015
DOI: 10.1134/s1063784215040076
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Design and investigation of UV image detectors

Abstract: The results of investigation of optical image detectors designed for the largest problem, near VUV, range of the spectrum are presented. The possibility of using a dual stage image detection system to appre ciably lower the sensitivity threshold and make computer data processing feasible is considered. The integra tion of a UV module into a wideband image detector is studied.

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Cited by 4 publications
(2 citation statements)
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“…For the high-voltage electronics, the diamond-based semiconductor devices can significantly reduce energy consumption and increase limit breakdown voltages, an operating frequency and temperature [7][8][9][10][11]. Low coefficients of adhesion and friction in diamond (as compared to silicon) demonstrate advantages of application of diamond films in microelectromechanical (MEM) devices [12][13][14][15].Undoped diamond can be used to create sensors of charged particles, X-ray and ultraviolet radiation [16][17][18], as well as to create UV photodetectors [19,20]. On the other hand, impurity doping to the ultra-high level in extremely narrow layers (δ-doping) is considered as a real way of creating powerful unipolar transistors [21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…For the high-voltage electronics, the diamond-based semiconductor devices can significantly reduce energy consumption and increase limit breakdown voltages, an operating frequency and temperature [7][8][9][10][11]. Low coefficients of adhesion and friction in diamond (as compared to silicon) demonstrate advantages of application of diamond films in microelectromechanical (MEM) devices [12][13][14][15].Undoped diamond can be used to create sensors of charged particles, X-ray and ultraviolet radiation [16][17][18], as well as to create UV photodetectors [19,20]. On the other hand, impurity doping to the ultra-high level in extremely narrow layers (δ-doping) is considered as a real way of creating powerful unipolar transistors [21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…A key problem in the development of Vac UV electron-optical converters (Vac UV EOCs) is the development of a solar-blind photocathode. In Russia, solar-blind ultraviolet photocathodes for Vac UV EOCs are being developed by a group of researchers in Zelenograd [4], while UV image receivers based on traditional bi-alkali photocathodes and nonlinear bandpass filters are being developed at the ELEC-TRON Central Research Institute (St. Petersburg) [5] and NPO Katod (Novosibirsk).…”
mentioning
confidence: 99%