2009 22nd International Conference on VLSI Design 2009
DOI: 10.1109/vlsi.design.2009.63
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Design and Implementation of Fine-Grain Power Gating with Ground Bounce Suppression

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Cited by 25 publications
(13 citation statements)
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“…All the functional units were assumed to have a bit width of 16. All the functional units, power switch [12], and BET were obtained by synthesizing them beforehand based on the CMOS 90 nm technology. Selectable voltages were assumed to v l = 0.8 V, v m = 1.0 V, and v h = 1.2 V. The clock period constraint was given to be 1.5 ns in all experiments.…”
Section: Resultsmentioning
confidence: 99%
“…All the functional units were assumed to have a bit width of 16. All the functional units, power switch [12], and BET were obtained by synthesizing them beforehand based on the CMOS 90 nm technology. Selectable voltages were assumed to v l = 0.8 V, v m = 1.0 V, and v h = 1.2 V. The clock period constraint was given to be 1.5 ns in all experiments.…”
Section: Resultsmentioning
confidence: 99%
“…9 for further evaluations. Specifically, we compare PART with the delay chain approach [8], [11]. As stated in the experimental setup, we use the peak current when SIMD is exercising its longest path to approximate the maximum active current.…”
Section: Performance Of Partmentioning
confidence: 99%
“…2(a)] into multiple ones [see Fig. 2(b)] and devise various strategies to turn on the power switches in a desired sequence [8], [10], [11]. As illustrated in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, most techniques achieve this through a progressive wakeup, either by turning on different parts of the circuit consecutively, or by gradually increasing the gate voltage of the sleep device [4,10]. The end result is an effective reduction in the inrush current, but at the cost of an increased wakeup time.…”
Section: Introductionmentioning
confidence: 99%