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2021
DOI: 10.1007/s40042-021-00152-9
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Design and growth of InAsP metamorphic buffers for InGaAs thermophotovoltaic cells

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Cited by 3 publications
(5 citation statements)
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“…According to reports, excessive PbI 2 accelerates the degradation of perovskite, so reducing the amount of PbI 2 can promote the stability of perovskite to a certain extent [33,34] . At the same time, the diffraction intensity of the main peak (001) in the perovskite film treated with CDT‐S or CDT‐N is significantly enhanced, indicating that the existence of CDT‐S and CDT‐N improved the crystallinity of perovskite film [35] . We also tested the UV‐vis of perovskite films, as shown in Figure 3b, after the introduction of CDT‐S or CDT‐N in perovskite films, there was no significant change in the absorption spectra, manifesting that CDT‐S or CDT‐N did not influence the light absorption property of perovskite films.…”
Section: Resultsmentioning
confidence: 94%
“…According to reports, excessive PbI 2 accelerates the degradation of perovskite, so reducing the amount of PbI 2 can promote the stability of perovskite to a certain extent [33,34] . At the same time, the diffraction intensity of the main peak (001) in the perovskite film treated with CDT‐S or CDT‐N is significantly enhanced, indicating that the existence of CDT‐S and CDT‐N improved the crystallinity of perovskite film [35] . We also tested the UV‐vis of perovskite films, as shown in Figure 3b, after the introduction of CDT‐S or CDT‐N in perovskite films, there was no significant change in the absorption spectra, manifesting that CDT‐S or CDT‐N did not influence the light absorption property of perovskite films.…”
Section: Resultsmentioning
confidence: 94%
“…[ 46 ] Similarly, adding Pb(SCN) 2 in Cs 0.1 FA 0.9 PbI 1.4 Br 1.6 has passivated GB and caused beneficial upward band bending at GB. [ 47 ] Several theories have been developed to explain the transport behavior of GBs with beneficial upward band bending at GB. The material discontinuity and dangling bond at the GB interface trap‐free carriers, and as a result, a potential energy barrier is built that eventually inhibits the transport of charge carriers and causes band bending.…”
Section: Resultsmentioning
confidence: 99%
“…Upward band bending accumulates holes and repels electrons at the interface, thus decreasing the probability of e–h recombination via the GB interface state, as shown schematically in Figure 4b. [ 47 ]…”
Section: Resultsmentioning
confidence: 99%
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“…On top of that, high thickness reduces the fraction of light transmitted to the underlying cells, resulting in a decrease in the photocurrent. [183] On the contrary, the textured surface of SSC should be fully covered to avoid shunt losses. Hence, preparing perovskite film over 1 μm is not straightforward in WBG perovskite films with low nonradiative recombination and long carrier diffusion lengths.…”
Section: Perovskite On Textured Surfacementioning
confidence: 99%