Design and fabrication of ridge waveguide-based nanobeam cavities for on-chip single-photon sources

Gür, Uğur Meriç; Yang, Yuhui; Schall, Johannes; Schmidt, R.; Kaganskiy, Arsenty; Wang, Yujing; Vannucci, Luca; Mattes, Michael; Arslanagić, Samel; Reitzenstein, Stephan; Gregersen, Niels

doi:10.1364/oe.453164

Cited by 5 publications

(3 citation statements)

References 44 publications

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“…Building on this foundation, the integration of two 1D distributed Bragg reflectors (DBRs) to form a nanobeam cavity further underscored the improved coupling efficiency achieved through careful cavity parameter design. This advancement was theoretically investigated on both the GaAs/AlGaAs [20] and GaAs-on-insulator (GaAsOI) platforms [21]. The latter, characterized by its high refractive index contrast that obviates the need for deep etching, combined with stronger optical confinement, theoretically enables near-unity coupling efficiency through careful cavity parameter design [21].…”

Section: Introductionmentioning

confidence: 99%

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

Zhou,

Yang,

Wang

et al. 2024

Mater. Quantum. Technol.

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This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.

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Section: Introductionmentioning

confidence: 99%

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

Zhou,

Yang,

Wang

et al. 2024

Mater. Quantum. Technol.

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“…In this context, the spatially controlled integration of single QDs with nanometer precision into optical and plasmonic devices is crucial for the development of on-chip single-photon sources. − In the past few years, scientists have tried to achieve this result by employing different technologies using molecular beam epitaxy , or in situ electron beam lithography. − A different and successful approach consists in the incorporation of QDs into photopolymerizable resins, allowing for the precise location of QDs and the integration of single nanoemitters into optical and plasmonic devices, by using two-photon lithography. ,, This is a faster and use-friendly single-step process, as it does not require an electron-collimated beam or vacuum technology while managing to precisely locate QDs in a three-dimensional volume, on whichever kind of substrate.…”

Section: Introductionmentioning

confidence: 99%

Quantum Dot Transfer from the Organic Phase to Acrylic Monomers for the Controlled Integration of Single-Photon Sources by Photopolymerization

Issa

Ritacco

et al. 2023

ACS Appl. Mater. Interfaces

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This paper reports on a new strategy for obtaining homogeneous dispersion of grafted quantum dots (QDs) in a photopolymer matrix and their use for the integration of single-photon sources by two-photon polymerization (TPP) with nanoscale precision. The method is based on phase transfer of QDs from organic solvents to an acrylic matrix. The detailed protocol is described, and the corresponding mechanism is investigated and revealed. The phase transfer is done by ligand exchange through the introduction of mono-2-(methacryloyloxy) ethyl succinate (MES) that replaces oleic acid (OA). Infrared (IR) measurements show the replacement of OA on the QD surface by MES after ligand exchange. This allows QDs to move from the hexane phase to the pentaerythritol triacrylate (PETA) phase. The QDs that are homogeneously dispersed in the photopolymer without any clusterization do not show any significant broadening in their photoluminescence spectra even after more than 3 years. The ability of the hybrid photopolymer to create micro- and nanostructures by two-photon polymerization is demonstrated. The homogeneity of emission from 2D and 3D microstructures is confirmed by confocal photoluminescence microscopy. The fabrication and integration of a single-photon source in a spatially controlled manner by TPP is achieved and confirmed by auto-correlation measurements.

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“…Applying this strategy, the coupling efficiency from an InAs QD to a bare GaAs ridge waveguide located on the top of a low index silica substrate has achieved ∼60% [28]. Recently, researchers presented a rectangular distributed Bragg reflector (DBR) holes-based SPS featuring an efficiency of 86% [29], and a value of 73% in a circular-hole DBR device [30]. Nevertheless, realizing a near-unity efficiency comparable to the state-of-the-art micropillar or PC waveguide SPS in semiconductor ridge waveguide platform is still of critical importance and under pursuit.…”

Section: Introductionmentioning

confidence: 99%

Near-unity efficiency in ridge waveguide-based, on-chip single-photon sources

Wang

Vannucci

Burger

et al. 2022

Mater. Quantum. Technol.

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We report a numerical design procedure for pursuing a near-unity coupling efficiency in quantum dot-cavity ridge waveguide single-photon sources by performing simulations with the finite element method. Our optimum design which is based on a 1D nanobeam cavity, achieves a high source efficiency εxy of 97.7% for an isotropic in-plane dipole, together with a remarkable Purcell factor of 38.6. Such a good performance is mainly attributed to the high index contrast of GaAs/SiO2 and a careful cavity design achieving constructive interference and low scattering losses. Furthermore, we analyze the bottleneck of the proposed platform, which is the mode mismatch between the cavity mode and the Bloch mode in the nanobeam. Accordingly, we present the optimization recipe of an arbitrarily high-efficiency on-chip single-photon source by implementing a taper section, whose high smoothness is beneficial to gradually overcoming the mode mismatch, and therefore leading to a higher Purcell factor and source efficiency. Finally, we see good robustness of the source properties in the taper-nanobeam system under the consideration of realistic fabrication imperfections on the hole variation.

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Design and fabrication of ridge waveguide-based nanobeam cavities for on-chip single-photon sources

Cited by 5 publications

References 44 publications

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

Quantum Dot Transfer from the Organic Phase to Acrylic Monomers for the Controlled Integration of Single-Photon Sources by Photopolymerization

Near-unity efficiency in ridge waveguide-based, on-chip single-photon sources

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