8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings
DOI: 10.1109/ispsd.1996.509481
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Design and fabrication of new high voltage current limiting devices for serial protection applications

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Cited by 9 publications
(3 citation statements)
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“…All these constraints will globally define the electrical specifications of this kind of device. Up to now, only few semiconductor current limiter structures have been described in the literature [17], [16]. Although Current Regulative Diode components already exist, their voltage and current capabilities (V BR = 100V , I MAX = 10mA), do not allow to use them in power systems.…”
Section: A Current Limiting Devicesmentioning
confidence: 99%
“…All these constraints will globally define the electrical specifications of this kind of device. Up to now, only few semiconductor current limiter structures have been described in the literature [17], [16]. Although Current Regulative Diode components already exist, their voltage and current capabilities (V BR = 100V , I MAX = 10mA), do not allow to use them in power systems.…”
Section: A Current Limiting Devicesmentioning
confidence: 99%
“…Such a feature is also required in more electric aircraft (MOA) applications. To address this point, various semi-conductors based solutions have been presented in the past, from low current ratings [2] to high current ratings [3], being either monolithic [4] or hybrid solid state circuit breaker [5] solutions. For PV applications, bypass diodes are commonly used to protect strings against faults, and/or to keep a generation plant operational in case of shading.…”
Section: Introductionmentioning
confidence: 99%
“…For comparison with the silicon case, we studied a similar structure, as there is no commercial silicon current limiting device acting in the range of 20A/600V. The silicon device is a power MOSFET with an implanted channel [13], the low doped region is optimized for 600V (45 µm/10 14 cm -3 ).…”
Section: Electrothermal Simulationmentioning
confidence: 99%