Design and Fabrication of Large Scale Micro-LED Arrays and Silicon Driver for OEIC Devices

Shin, Sangbaie; Iijima, Ko-Ichiro; Okada, Hiroshi; Iwayama, Sho; Wakahara, Akihiro

doi:10.1587/transele.e95.c.898

Cited by 4 publications

(3 citation statements)

References 15 publications

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“…We have demonstrated a flip-chip integration device consisting of a 128 × 128 pixels GaN micro-light-emitting-diode (LED) array and a CMOS drive circuit as a prototype of an optoelectronic integration device. 27) However, micro-bump connections caused physical damage to micro-LEDs because of pressure concentration, resulting in low device yield.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Si/SiO₂/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Tsuchiyama¹,

Yamane²,

Sekiguchi³

et al. 2016

Jpn. J. Appl. Phys.

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A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Si/SiO₂/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Tsuchiyama¹,

Yamane²,

Sekiguchi³

et al. 2016

Jpn. J. Appl. Phys.

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“…Our research group has been studying optoelectronic neurochips as heterogeneous OEICs over the past 10 years. [16][17][18][19][20][21][22][23][24][25][26] We are aiming to achieve biological system information processing by calculating the analog optical inputs of 2D matrix neurochips, and stacking of 2D matrix optical output arrays for analog optical results. In this study, we evaluated the optical interconnection between analog chips by prototype heterogeneous OEICs for the 2D vertical neurointegrated optical ICs.…”

Section: Introductionmentioning

confidence: 99%

Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

Shin¹,

Sekiguchi²,

Okada³

et al. 2013

Jpn. J. Appl. Phys.

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In this study, the prototype optoelectronic integrated circuits (OEICs) operating with optical input signals were designed and fabricated. A back-side-illuminated (BSI) photodiode was designed and demonstrated by a newly proposed practical method, utilizing micro-electromechanical systems (MEMS) and postcomplement metal oxide semiconductor (CMOS) processes. Additional fabrication processes for the BSI photodiode were proposed and described in detail in this paper. The operational amplifier for amplification of the optical current by the BSI photodiode as the transimpedance amplifier was designed and fabricated. And the pulse width modulation (PWM) wave generator was implemented for modulating optical signals as the prototype OEIC device. The maximum quantum efficiency of 28.4% was obtained from the fabricated BSI photodiode. Output signals of PWM were successfully controlled by the generated optical current of the BSI photodiode.

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“…Zhang et al demonstrated a hybrid integrated circuit consisting of GaN-µLED arrays and Si CMOS circuits using flip-chip bonding. 4) For added value applications, including microdisplays and optical lab-on-chips, 5-7) Day et al 8) and Shin and coworkers 9,10) demonstrated a technique of integrating GaN-µLED arrays and Si CMOS circuits. Additionally, monolithic integration using GaN-based materials, such as Si CMOS=GaN-based HEMTs 11) for the development of novel power electronic devices, GaN-based LEDs= HEMTs, 12) and GaN-based LEDs=MOSFETs 13) for lightemitting power integrated circuits, has also been reported.…”

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confidence: 99%

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED wafer

Tsuchiyama

Yamane

Utsunomiya

et al. 2016

Appl. Phys. Express

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In this report, we present a monolithic integration method for a Si-MOSFET and a GaN-LED onto a Si/SiO2/GaN-LED wafer as an elemental technology for monolithic optoelectronic integrated circuits. To enable a Si-MOSFET device process, we investigated the thermal tolerance of a thin top-Si and GaN-LED layer on a Si/SiO2/GaN-LED wafer. The high thermal tolerance of the Si/SiO2/GaN-LED structure allowed for the monolithic integration of a Si n-MOSFET and a GaN-µLED without degrading the performance of either device. A GaN-µLED driver circuit was fabricated using a Si n-MOSFET and a µLED of 30 × 30 µm2, with the modulation bandwidth of the circuit estimated to be over 10 MHz.

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Design and Fabrication of Large Scale Micro-LED Arrays and Silicon Driver for OEIC Devices

Cited by 4 publications

References 15 publications

Fabrication of Si/SiO₂/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Fabrication of Si/SiO₂/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED wafer

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Design and Fabrication of Large Scale Micro-LED Arrays and Silicon Driver for OEIC Devices

Cited by 4 publications

References 15 publications

Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer

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Resources

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Fabrication of Si/SiO₂/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Fabrication of Si/SiO₂/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED wafer