Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

Beattie, Neil; See, P.; Zoppi, Guillaume; Ushasree, P. M.; Duchamp, Martial; Farrer, I.; Ritchie, D. A.; Tomić, Stanko

doi:10.1109/pvsc.2018.8547630

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Among the different strategies to introduce intermediate levels, a promising one is to take advantage of nanostructures such as quantum dots (QDs) or quantum wells (QWs) [3][4][5]. In this framework, self-assembled (Al)GaAs/InAs/GaAs QDs arrays grown via epitaxial Stranski-Krastanov (SK) mode within the intrinsic region of a GaAs pin diode have been widely used as a means of implementing the concept of IBSCs due to their discrete density of states and well-established technology, where the IB arises from the energy states associated to the electrons confined in the CB of the QDs [6,7]. Although several of the principles of IBSC operation have been demonstrated [8,9], the reported efficiencies are nowadays well below expectations [10,11].…”

Section: Introductionmentioning

confidence: 99%

Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

et al. 2022

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Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although it has been proposed that this improvement is due to the suppression of the capture of photogenerated carriers through the wetting layer (WL) states by a de-wetting process, the mechanisms that operate during this process are not clear. In this work, a structural analysis of the WL characteristics in the AlAs/InAs QD system with different CL-thickness has been made by scanning transmission electron microscopy techniques. First, an exponential decline of the amount of InAs in the WL with the CL thickness increase has been found, far from a complete elimination of the WL. Instead, this reduction is linked to a higher shield effect against QD decomposition. Second, there is no compositional separation between the WL and CL, but rather single layer with a variable content of InAlGaAs. Both effects, the high intermixing and WL reduction cause a drastic change in electronic levels, with the CL making up of 1–2 monolayers being the most effective configuration to reduce the radiative-recombination and minimize the potential barriers for carrier transport.

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Section: Introductionmentioning

confidence: 99%

Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

et al. 2022

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“…Tuning QD properties, QD IBSC enables to capture a wider spectrum of solar radiation by controlling the number of IBs and the number of optical transitions [9]. Experimental and computational works on IB generation in thin film plus III-V and II-VI inorganic QD solar cells [CdSe, PbSe, InP, Cu(In,Ga)(Se,S)2, Si, InGaAs, SiC] are available [10][11][12][13] but similar reports with inorganic-organic perovskite solar cells (PSCs) are rare.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation into Photovoltaic Performance of Organolead Trihalide Perovskite Quantum Dot Intermediate Band Solar Cell

Roy

Rahman

Kundu

et al. 2022

MSF

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In this work, an intermediate band solar cell (IBSC) model consisting of MAPbI3 quantum dots (QD) and MAPbCl3 barrier material is explored analytically with MATLAB. Titanium di-oxide (TiO2) is used as transport layer for electron and Spiro-OMeTAD (2,2',7,7'-tet-rakis (N,N'-di-p-methoxyphenylamine)–9,9' spirobifluorene) is used as transport layer for hole. Fluorine-doped tin oxide (FTO) and Silver (Ag) is used as top and bottom contact. The impact of QD size and dot spacing on the key parameters of MAPbI3 QD-IBSC is illustrated throughout this paper. In order to identify the number of IB in a single regime, Schrödinger equation is solved as a function of host energy gap using Kronig–Penney model. The detailed balance limit assumptions with unity fill factor are applied to extract highest efficiency from the system. For any case, face centered cubic (FCC) crystal structure is assumed. The (100) crystal orientation is considered as charge carriers from n–region to p–region transport in this orientation. Major performance indicators of the device such as photocurrent intensity Jsc, open circuit voltage Voc and power conversion efficiency η have been delineated. Highest efficiency of 63% is attained for dot size of 4 nm and dot spacing of 1.5 nm.

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Key photovoltaic parameters of organohalide lead perovskite quantum dot intermediate band solar cell: A numerical investigation

Roy

Mondol

Hossain

et al. 2021

Materials Today Communications

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Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

Abstract: This is a repository copy of Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering.

Cited by 3 publications

References 15 publications

Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

Numerical Investigation into Photovoltaic Performance of Organolead Trihalide Perovskite Quantum Dot Intermediate Band Solar Cell

Key photovoltaic parameters of organohalide lead perovskite quantum dot intermediate band solar cell: A numerical investigation

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