Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Maeda, Takuya; Narita, Toshio; Ueda, Hiroyuki; Kanechika, Masakazu; Uesugi, Tsutomu; Kachi, Tetsu; Kimoto, Tsunenobu; Horita, Masahiro; Suda, Jun

doi:10.1109/led.2019.2912395

Cited by 94 publications

(60 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Taking θ = 10° as an example, the experimental results support these findings. A parallelplane breakdown field of 2.86 MV/cm was achieved, and this outcome is consistent with the simulation [77].…”

Section: Mesa Terminationsupporting

confidence: 88%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

View full text Add to dashboard Cite

As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

show abstract

Section: Mesa Terminationsupporting

confidence: 88%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…The symbols are measured data from different research groups. ( : N D = 1.9 × ½¼ 17 cm −¿[43]; •: N D = 5.5 × ½¼ 16 cm −¿[44]; and : N D = 2 × 10 16 cm −¿[45]. )…”

mentioning

confidence: 99%

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

Cao

Zhu

Harden

et al. 2021

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-in diodes grown on bulk GaN substrates have been fabricated and characterized, and the impact ionization coefficients for both electrons and holes have been extracted using the photomultiplication method. Both the electron and hole impact ionization coefficients decrease as the temperature increases. The Okuto-Crowell model was used to describe the temperature dependence of the electron and hole impact ionization coefficients. Based on the measured impact ionization coefficients, the temperature dependence of the breakdown voltage of GaN non-punch through p-n diodes can be predicted; good agreement with experimentally reported results is obtained.

show abstract

“…The bevel angle is selected to be 15 • in the subsequent simulations in this work. Such small bevel angle can be realized with well controlled etching process in GaN PiN diodes [22], [23].…”

Section: Bevel Anglementioning

confidence: 99%

“…Alternative termination techniques have been developed to suppress the premature breakdown in vertical GaN power devices [20]- [23]. High-dose (∼10 16 cm −2 ) implantation of argon [20] and nitrogen [21] have been used to form edge termination structures for vertical GaN Schottky barrier diode (SBD) and PiN diode, respectively, by creating deep-level traps in the termination regions.…”

Section: Introductionmentioning

confidence: 99%

“…High-dose (∼10 16 cm −2 ) implantation of argon [20] and nitrogen [21] have been used to form edge termination structures for vertical GaN Schottky barrier diode (SBD) and PiN diode, respectively, by creating deep-level traps in the termination regions. Moreover, with comparable doping concentration (∼10 17 cm −3 ) in the p-layer and n-drift layer, a uniform avalanche breakdown at ∼400-500 V can be achieved in the vertical GaN PiN diodes with a bevel structure [22], [23]. For higher BV with larger epitaxial thickness, it requires careful design/control of the doping concentration in the p-layer and n-drift layer as well as the bevel termination structures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

Liu

Yang

Sheng

2020

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in premature breakdown. It is challenging to employ the commonly used junction-based termination techniques as in Si and SiC high-voltage devices for vertical GaN devices, due to the difficulty of selective p-type doping and activation in GaN. In this work, based on the unique feature of the negatively charged F ions in GaN which can favorably modulate the edge electric field, a fluorine-implanted termination (FIT) structure for vertical GaN PiN diodes has been designed and optimized to suppress the electric field crowding at the junction edge for a higher breakdown voltage (BV). The key parameters of the FIT, including the F ion dose, the thickness and width of the FIT and the angle of the bevel structure, have been comprehensively investigated by TCAD simulations to reveal their impacts on BV. Moreover, with a tapered dose distribution in the FIT, the device can achieve a higher BV with an enlarged FIT dose window. INDEX TERMS GaN-on-GaN, breakdown voltage, edge termination, fluorine ion implantation, PiN diode.

show abstract

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Cited by 94 publications

References 26 publications

Review of Recent Progress on Vertical GaN-Based PN Diodes

Review of Recent Progress on Vertical GaN-Based PN Diodes

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

Contact Info

Product

Resources

About