“…[2−4] Photonic ICs in indium phosphide (InP) are also the key to next-generation optical components due to their potential for performance, reliability, footprint size and especially cost efficiency in mass deployment. [5,6] Low-cost, high-sensitivity, and high-performance photodetector arrays operating at 1.55 µm wavelength are crucial for communication, measurement, and especially for parallel optical link applications and WDM systems. [7,8] There has been a great deal of interest demonstrated in photodetectors (PDs) with side-illuminated evanescently coupled waveguide photodetectors (ECPDs) due to the fact that not only do they allow one to overcome the well-known compromise between responsivity and electrical bandwidth, [9] but also they offer the ease of integration with other optoelectronic devices to realize complex systems.…”