Design and fabrication of a GaAs monolithic operational amplifier

Katsu, S.; Kazumura, M.; Kano, G.

doi:10.1109/16.3333

Cited by 6 publications

(2 citation statements)

References 2 publications

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“…Recent advances in the field of integrated chip-manufacturing processes have fostered the ever-increasing need for the development of reliable and high-performance operational amplifiers (op-amps). Op-amps have become one of the most common electronic devices in the field of analog and control integrated circuits [1][2][3]. At the front end of the signal transmission link, the op-amp can sense and amplify the function of the input signal [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic Susceptibility Analysis of the Operational Amplifier to Conducted EMI Injected through the Power Supply Port

Huang,

Li,

Wei

et al. 2024

Micromachines

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Operational amplifiers (op-amps) are widely used in circuit systems. The increasing complexity of the power supply network has led to the susceptibility of the power supply port to electromagnetic interference (EMI) in circuit systems. Therefore, it is necessary to investigate the electromagnetic susceptibility (EMS) of op-amps at the power supply port. In this paper, we assessed the effect of EMI on the operational performance of op-amps through the power supply port by a bulk current injection (BCI) method. Firstly, we conducted the continuous sine wave into the power supply port by a current injection probe and measured the change in the offset voltage under EMI. Secondly, we proposed a new method of conducted susceptibility and obtained the susceptibility threshold regularities of the op-amps at the power supply port under the interference of different waveform signals. Our study provided conclusive evidence that EMI reduced the reliability of the op-amp by affecting the offset voltage of op-amps and demonstrated that the sensitivity type of op-amps was peak-sensitive at the power supply port. This study contributed to a deep understanding of the EMS mechanism and guided the design of electromagnetic compatibility (EMC) of op-amps.

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Section: Introductionmentioning

confidence: 99%

Electromagnetic Susceptibility Analysis of the Operational Amplifier to Conducted EMI Injected through the Power Supply Port

Huang,

Li,

Wei

et al. 2024

Micromachines

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“…More generally, power consumption is a problem for MESFET circuits. Increased transconductance means setting the source drain current Ids at a high level, therefore the dc power consumption is increased [3]. Our present device parameters call for a 5 Volt source-drain voltage drop across each active device and a load transistor current of 10 mA.…”

Section: Circuit Issuesmentioning

confidence: 98%

Integrated GaAs microsensors

Polla

Tamagawa

Choi

IEEE International Symposium on Circuits and Systems

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A b s t r a c tThe compatible integration of planar-processed microsensor structures with GaAs MESFET depletion-mode operational amplifiers is described.Basic low-noise differential amplifiers have been integrated with on-chip piezoelectric pressure sensors and accelerometers. A key design issue in this work is the fabrication constraint of forming both amplifiers and deformable microsensor structures on a common GaAs semi-insulating substrate. Circuits using 2.0 wm-gate FETs are formed in planar, direct, ion-implantation process. Main features of this process include a lightly-doped shallow channel layer, selective n+ contact layers, and planar isolation by proton implantation. A deformable microsensor structure using the piezoelectric thin film zinc oxide is formed over a micromachined air gap over the GaAs substrate. The circuit and fabrication issues of integrated GaAs microsensors are described and compared with equivalent implementations using silicon technology.

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Circuit Integration in E-Mode GaN

Kaufmann

Wicht

2022

Monolithic Integration in E-Mode GaN Technology

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Design and fabrication of a GaAs monolithic operational amplifier

Cited by 6 publications

References 2 publications

Electromagnetic Susceptibility Analysis of the Operational Amplifier to Conducted EMI Injected through the Power Supply Port

Electromagnetic Susceptibility Analysis of the Operational Amplifier to Conducted EMI Injected through the Power Supply Port

Integrated GaAs microsensors

Circuit Integration in E-Mode GaN

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