Design and Fabrication of 10-/40-Gb/s, Uncooled Electroabsorption Modulator Integrated DFB Laser With Butt-Joint Structure

Kobayashi, Wataru; Arai, M.; Yamanaka, T.; Fujiwara, Naoki; Fujisawa, Takeshi; Tadokoro, Takashi; Tsuzuki, Ken; Kondo, Y.; Kano, F.

doi:10.1109/jlt.2009.2036865

Cited by 87 publications

(37 citation statements)

References 13 publications

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“…The InGaAlAs MQWs allow for a steep extinction curve and large E/O frequency bandwidth [32], and hence can support operation at 25-Gbit/s with a sufficient extinction ratio and over a wide wavelength range. Figure 12a shows the NRZ eye diagram for a 25-Gbps pseudorandom bit stream (PRBS) of 2 31 -1.…”

Section: Enabling Devicesmentioning

confidence: 99%

Hybrid Optoelectronic Router for Future Optical Packet‐ Switched Networks

Ibrahim¹,

Takahashi²

2017

Optoelectronics - Advanced Device Structures

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With the growing demand for bandwidth and the need to support new services, several challenges are awaiting future photonic networks. In particular, the performance of current network nodes dominated by electrical routers/switches is seen as a bottleneck that is accentuated by the pressing demand for reducing the network power consumption. With the concept of performing more node functions with optics/optoelectronics, optical packet switching (OPS) provides a promising solution. We have developed a hybrid optoelectronic router (HOPR) prototype that exhibits low power consumption and low latency together with high functionality. The router is enabled by key optical/optoelectronic devices and subsystem technologies that are combined with CMOS electronics in a novel architecture to leverage the strengths of both optics/optoelectronics and electronics. In this chapter, we review our recent HOPR prototype developed for realizing a new photonic intra data center (DC) network. After briefly explaining about the HOPR-based DC network, we highlight the underlying technologies of the new prototype that enables label processing, switching, and buffering of asynchronous arbitrary-length 100-Gbps (25-Gbps × 4λs) burst-mode optical packets with enhanced power efficiency and reduced latency.

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Section: Enabling Devicesmentioning

confidence: 99%

Hybrid Optoelectronic Router for Future Optical Packet‐ Switched Networks

Ibrahim¹,

Takahashi²

2017

Optoelectronics - Advanced Device Structures

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“…Therefore, there is a tradeoff between available extinction ratio and high-speed characteristics. Since the state of the art 40-Gbit/s EAM for 1.55 mm using InAlGaAs-based QWs employ the valence band offset around 120 meV [29], similar valence band offset is available for GeSn/SiGeSn QWs.…”

Section: Qcse Of Gesn/sigesn Quantum Wellsmentioning

confidence: 99%

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

Fujisawa

Saitoh

2015

IEEE J. Quantum Electron.

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Abstract-Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-infrared region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.Index Terms -Si photonics, GeSn quantum wells, electroabsorption modulators, quantum-confined Stark effect, and many-body theory.

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“…On the other hand, InGaAlAs MQWs are used in the EAM section to achieve 25-Gbit/s operation with a sufficient extinction ratio over a wide wavelength range. These MQWs have a large conduction band offset and a small valence band offset compared with InGaAsP MQWs; resulting in a steep extinction curve and large E/O frequency bandwidth [23]. The EAM section composed of InGaAlAs MQWs is directly butt-jointed to the PRR-TL section.…”

Section: Tunable Transmittermentioning

confidence: 99%

“…The length of the EAM section is 150 µm. The EAM section is buried with BCB to reduce the capacitance of the EAM section, and thereby the frequency bandwidth is extended up to 39 GHz [23]. The electrodes are then formed by a liftoff process.…”

Section: Tunable Transmittermentioning

confidence: 99%

Wavelength-Routed Switching for 25-Gbit/s Optical Packets Using a Compact Transmitter Integrating a Parallel-Ring-Resonator Tunable Laser and an InGaAlAs EAM

Segawa

Kobayashi

Nakahara

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe describe wavelength-routed switching technology for 25-Gbit/s optical packets using a tunable transmitter that monolithically integrates a parallel-ring-resonator tunable laser and an InGaAlAs electroabsorption modulator (EAM). The transmitter provided accurate wavelength tunability with 100-GHz spacing and small output power variation. A 25-Gbit/s burst-mode optical-packet data was encoded onto the laser output by modulating the integrated EAM with a constant voltage swing of 2 V at 45 • C. Clear eye openings were observed at the output of the 100 GHz-spaced arrayed-waveguide grating with error-free operation being achieved for all packets. The tunable transmitter is very promising for realizing a high-speed, large-port-count and energy-efficient wavelengthrouting switch that enables the forwarding of 100-Gbit/s optical packets.

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Design and Fabrication of 10-/40-Gb/s, Uncooled Electroabsorption Modulator Integrated DFB Laser With Butt-Joint Structure

Cited by 87 publications

References 13 publications

Hybrid Optoelectronic Router for Future Optical Packet‐ Switched Networks

Hybrid Optoelectronic Router for Future Optical Packet‐ Switched Networks

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

Wavelength-Routed Switching for 25-Gbit/s Optical Packets Using a Compact Transmitter Integrating a Parallel-Ring-Resonator Tunable Laser and an InGaAlAs EAM

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