Design and experiment of RF rectifiers for wireless power transmission

Mabrouki, Aya; Latrach, Mohamed; Sayegh, Zaher

doi:10.1109/mms.2013.6663079

Cited by 16 publications

(6 citation statements)

References 9 publications

(8 reference statements)

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“…6. The circuit occupies a total area of 5cm² which still very small in comparison with the area of rectifier structures using microstrip stub lines either in output or input filters [6] [9]. The measured input return loss S11 is shown in Fig.…”

Section: Rectifier Measurement Resultsmentioning

confidence: 99%

“…However, optimized results are obtained only for input power beyond 0dBm. Other research works, [6][7] [8], deal with the improvement of the DC output filter of the rectenna to boost the DC voltage and the conversion efficiency but they still not very efficient for low power detection. The conventional rectifying structures that have been widely studied, measured, and discussed are mainly single shunt and series mounted diode, voltage doubler and bridge rectifiers.…”

Section: Introductionmentioning

confidence: 99%

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High efficiency low power rectifier design using zero bias schottky diodes

Mabrouki

Latrach

Lorrain

2014

2014 IEEE Faible Tension Faible Consommation

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International audienceIn this paper we present the design of high efficiency low power rectifier for microwave energy harvesting. The proposed circuit is based on a voltage booster formed by a voltage doubler type Latour structure. The circuit topology including parasitic elements and microstrip lines has been studied and optimized for high efficiency energy conversion dedicated to low input power operations (below-10dBm). Measurement results show 21% and 38% RF-DC conversion efficiencies for, respectively,-20dBm and-10dBm input power for 10KΩ resistor load at 850MHz. Experimental performances of the rectifier are in good agreement with the simulated ones

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Section: Rectifier Measurement Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High efficiency low power rectifier design using zero bias schottky diodes

Mabrouki

Latrach

Lorrain

2014

2014 IEEE Faible Tension Faible Consommation

Self Cite

View full text Add to dashboard Cite

show abstract

“…, , , = − , − 0.5   where , will have the same form as (11). However, as becomes lower, changes and becomes less negative.…”

Section: Proposed Designmentioning

confidence: 99%

“…In RF to DC conversion, the usual approach is to use diode-based rectifiers [10], [11]. However, this approach is not desirable since the diode has a high voltage drop, making it insensitive to low input voltage levels typically received in far-field RF energy harvesting [12].…”

Section: Introductionmentioning

confidence: 99%

A CMOS Rectifier Employing Body Biasing Scheme for RF Energy Harvesting

et al. 2021

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A CMOS rectifier for RF energy harvesting is proposed. The structure of the proposed design is based on a modified cross-coupled architecture. It employs an adaptive body biasing technique to lower the transistor threshold voltage (Vth) when the PMOS is ON which increases the conduction current. On the other hand, this technique increases Vth when the PMOS is OFF to minimize the current flowing in the reverse bias condition. The proposed design is simulated using 0.18µm TSMC CMOS technology under various loading conditions and input frequency of 953 MHz. A peak power conversion efficiency (PCE) of 78.2% is achieved at an input power of -27.5 dBm and a 100 kΩ load.INDEX TERMS CMOS rectifier, RF energy harvesting, body biasing, power conversion efficiency (PCE).

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“…This design method has widely been used in the RF rectifier design community. [14][15][16] In this case, accuracy of the simulated performance depends on the quality of the diode model. The loss mechanism in RF rectifiers with a realistic, nonideal diode model is described in Reference 17.…”

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confidence: 99%

Adaptive piecewise linear model for class C rectifier design

Arpanutud

Wei

Phaebua

et al. 2021

Int J Numerical Modelling

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In this work, an adaptive piecewise linear diode model is presented for class C rectifier design. The model is developed based on conventional piecewise linear diode model and curve fitting to extract the model parameters for different input power and load situations. The accuracy of the model is evaluated by comparing the calculated power conversion efficiency (PCE) using the proposed model with the simulation result of a commercial software tool (Keysight's ADS). By using the proposed model, PCE is determined by directly calculating the voltage and current waveforms of the diode using close form equations instead of using ADS harmonic balance simulation. The diode used for this study is SMS7621. With relatively low load resistance, the discrepancy of the calculated PCE compared to ADS is less than 0.0001% (at −0.5 dBm input power and with 1.26 kΩ load). The discrepancy is increased in case of a high load resistance which can be up to 5.28% (at −34.7 dBm input power and 40 kΩ load). The proposed diode model can be used to design a class C rectifier without using a commercial simulator given that the IV curve of the diode is provided in the datasheet or from a direct DC sweep measurement. In addition, the proposed model can also estimate achievable PCE of a diode used for implementation of a class C rectifier.

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Design and experiment of RF rectifiers for wireless power transmission

Cited by 16 publications

References 9 publications

High efficiency low power rectifier design using zero bias schottky diodes

High efficiency low power rectifier design using zero bias schottky diodes

A CMOS Rectifier Employing Body Biasing Scheme for RF Energy Harvesting

Adaptive piecewise linear model for class C rectifier design

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