光子学报
 2010
DOI: 10.3788/gzxb20103908.1409
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Design and Epitaxy of the Material for a 1 550 nm PNP InGaAsP-InP Heterojunction Bipolar Transistor Laser

段子刚 段子刚
1
,
柴广跃 柴广跃2
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