Design and epitaxial growth of quantum-well for 852 nm laser diode

Hua-wei, 徐华伟 Xu; Yongqiang, 宁永强 Ning; Yu-gang, 曾玉刚 Zeng; Xing, 张星 Zhang; Li, 秦莉 Qin

doi:10.3788/ope.20132103.0590

Cited by 4 publications

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“…Compared with silicon (Si), germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP), hexagonal boron nitride (h-BN), as a third-generation semiconductor, is a two-dimensional III-V group semiconductor material with excellent properties such as wide band gap, high hardness, high thermal conductivity, and corrosion resistance, which are generally used in high-frequency communication, electrical energy conversion, etc. [2][3][4][5]. These advantages allow the application of boron nitride for the production of devices suitable for extreme environments (such as outer space) that still function, such as deep-ultraviolet band light-emitting devices [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electronic and Optical Properties of (Cs, Br, Cs-Br) Doped Mono-Layer Hexagonal Boron Nitride Using First Principles

Zhang

et al. 2022

Crystals

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Research on the effect of alternative doping on the photoelectric properties of boron nitride is still at an early stage. In particular, research on hexagonal boron nitride’s diatomic co-doping is still rarely studied. In this work, first-principles calculations are selected as the main method to investigate the electronic structure and optical properties of different atoms used to dope hexagonal boron nitride (h-BN). The band gap value of intrinsic h-BN is 4.66 eV. The band gap was changed after Cs, Br, and Cs-Br doping. The results show that the band gap is 4.61 eV when the Br atom replaces the N atom, while the band gap of h-BN doped with Cs is 3.52 eV. Additionally, the band gap width can be reduced to a typical narrower band gap width of 3.19 eV when Cs-Br is used for doping. At the same time, the complex dielectric function representing the optical properties is calculated after Cs, Br, and Cs-Br doping. The optical absorption peaks of Cs-Br-doped h-BN are weaker at low-frequency conditions. The optical absorption of h-BN can be modified by Cs doping, Br doping, and Cs-Br co-doping in the near-infrared, visible, or portion of the near-ultraviolet bands, which makes the doped material more suited for photoelectric detectors in the relevant frequency bands.

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Section: Introductionmentioning

confidence: 99%

Investigation of Electronic and Optical Properties of (Cs, Br, Cs-Br) Doped Mono-Layer Hexagonal Boron Nitride Using First Principles

Zhang

et al. 2022

Crystals

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Theory study on the bandgap of antimonide-based multi-element alloys

Liu

Fan

et al. 2017

Int. J. Mod. Phys. B

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In order to meet the design requirements of the high-performance antimonide-based optoelectronic devices, the spin–orbit splitting correction method for bandgaps of Sb-based multi-element alloys is proposed. Based on the analysis of band structure, a correction factor is introduced in the In[Formula: see text]Ga[Formula: see text]As[Formula: see text]Sb[Formula: see text] bandgaps calculation with taking into account the spin–orbit coupling sufficiently. In addition, the In[Formula: see text]Ga[Formula: see text]As[Formula: see text]Sb[Formula: see text] films with different compositions are grown on GaSb substrates by molecular beam epitaxy (MBE), and the corresponding bandgaps are obtained by photoluminescence (PL) to test the accuracy and reliability of this new method. The results show that the calculated values agree fairly well with the experimental results. To further verify this new method, the bandgaps of a series of experimental samples reported before are calculated. The error rate analysis reveals that the [Formula: see text] of spin–orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the common method. It means this new method can calculate the antimonide multi-element more accurately and has the merit of wide applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

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Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys

Liu

Fan

et al. 2018

Acta Phys. Pol. A

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As the most important material parameter of semiconductor, bandgap is necessary to be investigated to meet the design requirements of the high-performance optoelectronic devices. A new method of is proposed to calibrate the bandgap of antimonide based multi-component alloys with considering the effect of spin-orbit splitting off bands and the doublet degeneracy of valance band on the bandgaps of Sb-containing materials. A correction factor is introduced in the conventional calculation, and the spin-orbit splitting method is proposed. Besides, the InxGa1−xAsySb1−y films with different compositions are grown on GaSb substrates by molecular beam epitaxy, and the corresponding bandgaps are obtained by photoluminescence to test the accuracy and reliability of this new method. An error rate analysis reveals that the α calculated by the spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the Moon method, which means that the new method can calculate the antimonide multicomponent more accurately with some applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

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Design and epitaxial growth of quantum-well for 852 nm laser diode

Cited by 4 publications

References 0 publications

Investigation of Electronic and Optical Properties of (Cs, Br, Cs-Br) Doped Mono-Layer Hexagonal Boron Nitride Using First Principles

Investigation of Electronic and Optical Properties of (Cs, Br, Cs-Br) Doped Mono-Layer Hexagonal Boron Nitride Using First Principles

Theory study on the bandgap of antimonide-based multi-element alloys

Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys

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