Design and Development of BTI Model and 3D InGaAs HEMT-Based SRAM for Reliable and Secure Internet of Things Application

Abstract

It is broadly accepted that the silicon-based CMOS has touched its scaling limits and alternative substrate materials are needed for future technology nodes. An Indium-Gallium-Arsenide ( I n G a A s )-based device is well situated for further technology nodes. This material also has better mobility of the electrons and holes for the high performance and real-time system design. The improved mobility helps to increase the operating frequency of the device which is useful for Internet of Things (IoT) applications. However, I n G a A s -based High Electron Mobility Transistors (HEMT) limits the reliability of the device due to the presence of dangling bonds at the channel–gate insulator interfaces. Weak dangling-bonds get broken under electric stress, and positive hydrogen atoms are trapped into the oxide. This charge trapping depends on the material parameters and device geometry. In this paper, the existing Bias-Temperature-Instability (BTI) model is modified based on the material parameters and device geometry. Charge trapping and annealing constants are the most critical BTI model parameters that are modeled and evaluated based on different HEMT material parameters. The proposed model was compared to experimental and TCAD simulation results. The proposed model has been used for lifetime prediction of the InGaAs HEMT-based Static Random-Access Memory (SRAM) cell because it is used to store and process the information in the IoT applications.

In-Vehicle Networking/Autonomous Vehicle Security for Internet of Things/Vehicles

“…In "Design and Development of BTI Model and 3D InGaAs HEMT-Based SRAM for Reliable and Secure Internet of Things Application" [12], Nandakishor Yadav et al take on the issue of the BTI model and 3D InGaAs HEMT-based SRAM for vehicle applications. It is broadly accepted that the silicon-based CMOS has touched its scaling limits and alternative substrate materials are needed for future technology nodes.…”

Resource Allocation Scheduling Optimization Based on Internet of Things under Cloud Platforms

“…I n recent years, based on the development of intelligent sensing technology and information and communication technology, the Internet of Things (IoT) technology is rapidly entering and profoundly influencing people's production and consumption activities [1]- [3], from the RFID technology that realizes intelligent sensing, to the smart terminals that can be seen anytime, anywhere, to the emergence of the theory of "cloud service" and its practical application [4], [5].…”

CNTFET-based Data Independent Power Efficient and Robust 8T SRAM Cell

“…20 In addition to these, SRAM and other logic circuitry are used frequently in the design of IoT devices. 21 For these IoT applications, a batteryenabled, low-leakage memory system operating with low power is essential. 22 Chip designers explore ways to create power efficient designs without sacrificing chip reliability and performance to meet market needs.…”