Design and Construction of a Direct-Plotting Capacitance Inverse-Doping Profiler for Semiconductor Evaluation

Spiwak, R.

doi:10.1109/tim.1969.4313800

Cited by 14 publications

(6 citation statements)

References 3 publications

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“…The use of arsenic-doped oxides has been reported for several years (1)(2)(3)(4)(5)(6). Recently, these oxides have shown much promise as emitter diffusion sources in planar transistor processing (7).…”

Section: Introductionmentioning

confidence: 99%

“…Amron (3) produced a simple slide rule facilitating this procedure. Recently, a number of proposals (4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14) have been made to overcome this difficulty electronically and some instruments have become commercially available. They are all based on clever use of the nonlinear circuit properties incorporated in Eq.…”

mentioning

confidence: 99%

“…The authors also use an automated instrument designed and built some years ago by Rusche (16). It operates at a 2 MHz carrier wave modulated with a 2 kHz signal modulation using a constant current unit like Copeland's instrument (4,5).…”

mentioning

confidence: 99%

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Capacitance-Voltage Measurements with a Mercury-Silicon Diode

Severin

Poodt

1972

J. Electrochem. Soc.

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The capacitance of a Schottky barrier diode measured as a function of reverse voltage yields the dope concentration and eventually the thickness of an epitaxially grown silicon layer. It is shown that mercury can be used as the metal contact to the silicon. This allows for a rapid and nondestructive C‒V measurement, particularly when combined with an automated instrument. The results obtained with different surface treatments are discussed. For reliable and reproducible results N‐type silicon should be covered with a thin oxide layer about 50Aå thick, which can easily be made wet chemically. The precision which can be attained with this system in actual practice amounts to ±2% or better and the accuracy depends on the definition of thickness used. This technique with the mercury contacting accessory works equally well on normalGaAs and normalGaP

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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Capacitance-Voltage Measurements with a Mercury-Silicon Diode

Severin

Poodt

1972

J. Electrochem. Soc.

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“…Schottky diodes are formed on the epitaxial layers by evaporating gold to form circular dots which are 0.508 mm in diameter and 1000A thick. The majority carrier concentration in the epitaxial film is determined from measurements on the Schottky diodes using the CIP technique (13,14) with the modifications reported by Thibault (15). The validity of the Schottky diode and the CIP measurements has been established by also making planar and mesa diodes on some samples and by obtaining capacitance-voltage measurements on the different diodes.…”

Section: Methodsmentioning

confidence: 99%

“…Infrared absorption spectroscopy is a powerful technique for the characterization and structural evaluation of dielectric thin films on silicon (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14). Aside from its usual ability to identify chemical entities present in the film, it is also capable of furnishing quantitatively chemical compositions of multicomponent films in a nondestructive manner.…”

Section: R ~-No (D/~t) '/2mentioning

confidence: 99%

Impurity Atom Transfer during Epitaxial Deposition of Silicon

Skelly¹,

Adams²

1973

J. Electrochem. Soc.

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When epitaxial silicon is deposited on highly doped substrates, impurity atoms transfer from the substrate to the growing epitaxial film. This transfer, usually referred to as autodoping, may establish a lower limit on the dopant concentration in the epitaxial film and may prevent the formation of an abrupt doping profile. We have studied the transfer of arsenic during the deposition of epitaxial silicon by the pyrolysis of silane at a temperature of 1050° C. The amount of autodoping is determined from the flat portion of the doping profile and has been studied as a function of the substrate dopant concentration. The data are interpreted in terms of solid‐state diffusion theory by assuming that during deposition the arsenic diffuses to the back of the substrate, evaporates from the back surface, transfers in the gas phase to the front surface, and then is incorporated into the film. Calculations indicate that 0.9% of the arsenic that evaporates from the back surface is deposited into the epitaxial film. Our results show that autodoping is linearly dependent on the substrate doping concentration and becomes significant when the arsenic concentration is greater than 2×1018 cm−3 . The autodoping can be reduced by a factor of about five by masking the back of the substrate with silicon oxide or by heating the substrate at a high temperature for a few minutes to allow the arsenic near the back surface to evaporate prior to deposition.

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Characterization of Heteroepitaxial Thin-Film Semiconductors on Insulating Substrates

Zanzucchi¹

1978

Heteroepitaxial Semiconductors for Electronic Devices

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Design and Construction of a Direct-Plotting Capacitance Inverse-Doping Profiler for Semiconductor Evaluation

Cited by 14 publications

References 3 publications

Capacitance-Voltage Measurements with a Mercury-Silicon Diode

Capacitance-Voltage Measurements with a Mercury-Silicon Diode

Impurity Atom Transfer during Epitaxial Deposition of Silicon

Characterization of Heteroepitaxial Thin-Film Semiconductors on Insulating Substrates

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