Design and characterization of Si integrated inductors

Abstract

This work describes a method to derive from measurements an accurate lumped element TABLE, SUBSTRATE CHARACTERISTICS model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the S-parameters of the, device under test and enables an accurate evziluation of the parasitic effects that limit the performance of these infegrafed devices. Permettivity Sa hire 11.6 Specific Thermal Resistivity Conductivity 0.42 1 0~~-1 0 '~ I 0.37