Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Bakowski, Mietek; Ranstad, Per; Lim, Jang‐Kwon; Kaplan, Wlodek; Reshanov, Sergey A.; Schöner, Adolf; Giezendanner, Florian; Ranstad, Anton

doi:10.1109/ted.2014.2361165

Cited by 19 publications

(14 citation statements)

References 16 publications

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“…Recent progress in carrier lifetime enhancement in 4H-SiC epitaxial layers given by the disclosure of the Z1/Z2 defect origin and means of its suppression finally opens the way to the production of reliable bipolar SiC devices. [1] The electron irradiation is a widely used technique to control the carrier lifetime in silicon power devices. On the one hand, it allows to improve electrical parameters, namely, to reduce the turn-off time, reverse recovery charge, or recovery loss.…”

Section: Introductionmentioning

confidence: 99%

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Hazdra

Vobecký

2019

Physica Status Solidi (a)

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Radiation damage produced in 4H-SiC n-epilayers by electrons of different energies is presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep-level transient spectroscopy and capacitance-to-voltage (C-V) measurement. Results, which are compared with previous data obtained on 4.5 MeV electrons, show that the damage structure is very similar for all irradiation energies. Dominating is the generation of simple, thermally unstable defects evidenced by the presence of acceptor levels located at 0.25, 0.38, 0.60, and 0.72 eV below the 4H-SiC conduction band edge. With increasing energy of electrons, the number of simple defects saturates, and the production of more complex, cluster-related defects grow. Majority of introduced defects are acceptor centers, which compensate n-type (nitrogen) doping of the epilayer. The carrier removal rate increases with electron energy and follows well the classical nonionization energy loss (NIEL) scaling for electrons in silicon. The stability of introduced defects and their effect on carrier lifetime reduction are discussed, as well.

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Section: Introductionmentioning

confidence: 99%

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Hazdra

Vobecký

2019

Physica Status Solidi (a)

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“…The influence of radiation defects on carrier lifetime and related electrical parameters was studied on 4.5 and 10 kV p-i-n diode chips fabricated on lightly doped (≤10 15 cm À3 ) n-type 4H-SiC epilayers. [1,5] Fast neutrons from the reference field of the LR-0 reactor were used for uniform lifetime reduction. [6] Diodes were irradiated at room temperature with fluences ranging from 5.6 Â 10 10 to 5.9 Â 10 12 cm À2 (1 MeV SiC equivalent).…”

Section: Methodsmentioning

confidence: 99%

Radiation Defects and Carrier Lifetime in 4H‐SiC Bipolar Devices

Hazdra

Smrkovský

Popelka

2021

Physica Status Solidi (a)

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The effect of radiation damage on the minority carrier lifetime in the 4 H‐SiC epilayers forming the n‐base of the power p–i–n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and local lifetime reduction. Deep‐level transient spectroscopy in combination with open‐circuit voltage decay measurement shows that the carrier lifetime is reduced by increased carrier recombination on Z1/Z2, EH3, and possibly RD4 levels. The lifetime degrades swiftly and the ON‐state carrier modulation capability of high‐voltage devices can be easily lost already at very low fluences. The results further show that the proton irradiation provides an excellent tool for local lifetime tailoring. The carrier lifetime can be easily set by proton fluence and localized by proton energy. The proper local lifetime reduction speeds up diode recovery without an undesirable increase in the forward voltage drop. However, attention must be taken to properly locate the damage maximum so as not to increase device leakage.

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“…45 times shorter turn-off time, over a 15 kV SiC p-GTO [96]. High-voltage PiN diode structures demonstrate low conduction energy loss R6 , but may generate high reverse recovery currents [97]. Merged PiN-Schottky diodes show less reverse recovery, and may be a suitable alternative [98].…”

Section: B High-power Sic Devicesmentioning

confidence: 99%

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

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Recent advancements in silicon carbide (SiC) power semiconductor technology enable developments in the high-power sector, e.g., high-voltage direct current (HVdc) converters for transmission, where today silicon (Si) devices are state-of-theart. New submodule (SM) topologies for modular multilevel converters (MMCs) offer benefits in combination with these new SiC semiconductors. This paper reviews developments in both fields, SiC power semiconductor devices and SM topologies, and evaluates their combined performance in relation to core requirements for HVdc converters: grid code compliance, reliability, and cost.A detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given. Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors (IGBTs) are proposed, and several promising design approaches are discussed. Most advantages can be gained from three technology features. Firstly, SM bipolar capability enables dc fault handling and reduced energy storage requirements. Secondly, SM topologies with parallel conduction paths in combination with SiC metal-oxide-semiconductor field effect transistors (MOSFETs) offer reduced losses. Thirdly, a higher SM voltage enabled by higher blocking voltage of SiC devices results in reduced converter complexity. For the latter, ultra-high-voltage (UHV) bipolar devices, such as SiC IGBTs and SiC gate turn-off thyristors (GTOs), are envisioned. Index Terms-HVdc transmission, modular multilevel converter, power semiconductor devices, silicon carbide, submodules. I. INTRODUCTIONH VDC transmission technology requires integration into the existing alternating current (ac) grid. The conversion is performed via high-power converters. The modular multilevel converter (MMC) is a versatile and flexible topology with several options for optimization. MMCs have been intensively investigated since the early 2000's. It was identified, that modularity, scalability, built-in redundancy, and harmonic performance are advantageous for meeting widely varying requirements in grid applications. Compared to previous voltage source converters (VSC), the need for bulky harmonic filters is Keijo Jacobs

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Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Cited by 19 publications

References 16 publications

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Radiation Defects and Carrier Lifetime in 4H‐SiC Bipolar Devices

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

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