Design and characterization of in-plane silicon stress sensors with isotropic sensitivity

Herrmann, Marcus; Gieschke, P.; Liu, Z.; Korvink, Jan G.; Ruther, Patrick; Oliver, Paul

doi:10.1109/icsens.2008.4716738

Cited by 14 publications

(3 citation statements)

References 3 publications

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“…Adapted with permission. [ 46 ] Copyright 2010, IEEE. c) Vector light sensors: i) Perspective view, ii) cross‐sectional view, and iii) SEM image of the vector light sensors with an inverted pyramid structure; iv) calibration curve of the vector light sensors.…”

Section: Bulk Chemical Etchingmentioning

confidence: 99%

“…As shown in Figure 3b(i), a coordinate sensor or coordinate measurement machine (CMM) with a “stylus‐on‐boss” structure consists of a hinged membrane (boss), probing pin, and probing sphere (stylus), and 32 piezoresistive field effect transistor (piezo‐FET) stress sensors. [ 46 ] The boss membrane is anisotropically etched by DRIE to achieve eight symmetrical cuboid hinges where four pieo‐FET stress sensors are integrated. A through‐hole is also etched in the center of the membrane to socket the stylus, comprising an aluminum (Al) pin and a ruby sphere.…”

Section: Bulk Chemical Etchingmentioning

confidence: 99%

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Review on Microscale Sensors with 3D Engineered Structures: Fabrication and Applications

Zhang

et al. 2022

Small Methods

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they can only perceive portion, along one or two axes, of a stimulus which is normally full of 3D space surrounding the sensors. [10,11] Another limitation is the deficient interface between the 2D sensors and target objects. For instance, health monitoring could be realized by attaching or implanting biomedical sensors to target organs or tissues of the human body. [12] However, it is difficult for traditional 2D sensors to collect accurate vital signals because they cannot conform to the 3D structure of organs or tissues. [13,14] Although this problem can be partially relieved by using flexible 2D sensors, [15] passive adaptation to target objects inevitably results in gaps. [16] Sensors with 3D structures have been developed to overcome these limitations. A 3D cubic sensor generated by selffolding has the ability to gain concentration as well as spatial information (i.e., direction and orientation) of target analytes surrounding the device. [17][18][19] Moreover, a 3D strain sensor fabricated by in situ 3D printing was observed to be compliant with the surface of a breathing porcine lung for continuous mapping of respiration-induced deformation with high 3D spatial resolution. [20] Besides full-space sensing and conformity to targets, compared to 2D counterparts, 3D sensors also possess advantages such as high sensitivity, [21] large specific surface area, [22] multimodal sensing, [23] and so forth.Despite their superiority to 2D sensors, it is challenging to fabricate a sensor with a delicate 3D configuration on a small scale because current micro-nano fabrication technologies are typically performed on planar silicon wafers. [35] Considerable efforts have been made to develop new fabrication methods for 3D sensors, which will be reviewed in this paper. According to the criterion of material quantity change, [36] these fabrication methods are divided into four categories: bulk chemical etching (subtractive manufacturing), 3D printing (additive manufacturing), molding (formative manufacturing), and stress-induced assembly (formative manufacturing), as shown in Figure 1. Basic applications or sensing functions (e.g., light, force, electricity, and chemical/gas), advanced applications (e.g., robotics, HMI, health monitoring, and tissue engineering), and strengths over 2D counterparts (high spatial resolution, multimodality, conformity, and high sensitivity) are illustrated for relevant 3D sensors. The fabrication methods and their pros and cons in generating 3D structures for various applications are summarized in Table 1. The discussions are concluded by outlining current challenges and future opportunities for 3D sensors.The intelligence of modern technologies relies on perceptual systems based on microscale sensors. However, because of the traditional top-down fabrication approaches performed on planar silicon wafers, a large proportion of existing microscale sensors have 2D structures, which severely restricts their sensing capabilities. To overcome these restrictions, over the past few decades, increasing e...

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Section: Bulk Chemical Etchingmentioning

confidence: 99%

Section: Bulk Chemical Etchingmentioning

confidence: 99%

Review on Microscale Sensors with 3D Engineered Structures: Fabrication and Applications

Zhang

et al. 2022

Small Methods

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show abstract

“…In order to exert in-plane shear stress ay on the same silicon strips, a novel TB was used [11]. The setup consists of two clamps precisely aligned on a rotational axis.…”

Section: Theory and Operation Modementioning

confidence: 99%

CMOS Integrated Stress Mapping Chips with 32 N-Type or P-Type Piezoresistive Field Effect Transistors

Gieschke

Nurcahyo

Herrmann

et al. 2009

2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems

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This paper reports a novel generation of CMOS stress mapping chips comprising 32 square field effect transistors (FET) with four source/drain contacts (piezoFETs) exploiting the shear piezoresistive effect in n-type (NMOS) or p-type (PMOS) inversion layers. The sensor chips with a total die area of 2.5 x 2 mm2 are integrated with analog circuitry and digital logic. When exposed to homogenous shear or normal stress, all 32 integrated stress sensors show a linear response in excellent agreement with theoretical predictions and exhibit identical stress sensitivities. Piezo-FETs fabricated as separate devices are characterized with respect to stress sensitivity, intrinsic offset, and noise behavior. Stress sensitivities are enhanced by incorporating a central hole into the piezo-FETs. Sensitivities of -448 iV/(V MPa) and 477 iV/(V MPa) were measured for NMOS and PMOS devices, respectively.

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Piezoresistive CMOS sensors for out-of-plane shear stress

et al. 2009

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Design and characterization of in-plane silicon stress sensors with isotropic sensitivity

Cited by 14 publications

References 3 publications

Review on Microscale Sensors with 3D Engineered Structures: Fabrication and Applications

Review on Microscale Sensors with 3D Engineered Structures: Fabrication and Applications

CMOS Integrated Stress Mapping Chips with 32 N-Type or P-Type Piezoresistive Field Effect Transistors

Piezoresistive CMOS sensors for out-of-plane shear stress

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