Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes

Yagyu, Eiji; Ishimura, E.; Nakaji, M.; Ihara, Satoshi; Mikami, Y.; Itamoto, Hiromitsu; Aoyagi, Takaaki; Yoshiara, Kiichi; Tokuda, Yasunori

doi:10.1109/jlt.2008.2004954

Cited by 22 publications

(16 citation statements)

References 10 publications

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“…The excess noise factor of this APD is 2.9 at the avalanche gain of 10. This noise factor is lower than 5.5 of the InGaAs APD with the indium phosphorous multiplication layer, 13 which was used by Dries et al 4 The developed APD array works well at room temperature unlike the mercury cadmium telluride APD, which needs to be cooled to lower than 100 K, 7 because of its dark current noise characteristic. The silicon single-photon avalanche diode (SPAD) has a good performance at room temperature at the wavelength of 870 nm; 9 however, for the 1.5-μm wavelength region, the material for SPAD changes to the InGaAs and the dark count rate, corresponding to the noise characteristics, becomes worse.…”

Section: Key Componentsmentioning

confidence: 94%

Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

et al. 2016

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"Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength," Opt. Eng. Abstract. We demonstrate a range imaging pulsed laser sensor with two-dimensional scanning of a transmitted beam and a scanless receiver using a high-aspect avalanche photodiode (APD) array for the eye-safe wavelength. The system achieves a high frame rate and long-range imaging with a relatively simple sensor configuration. We developed a high-aspect APD array for the wavelength of 1.5 μm, a receiver integrated circuit, and a range and intensity detector. By combining these devices, we realized 160 × 120 pixels range imaging with a frame rate of 8 Hz at a distance of about 50 m. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 UnportedLicense. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Key Componentsmentioning

confidence: 94%

Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

et al. 2016

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“…As denoted in Ref. 13, the excess noise factor of InP-APD is larger, and the value is 5.5 for the same multiplication condition. This means that the multiplication factor can be set at higher value for AlInAs-APD than the value for the other one under the same noise level.…”

Section: Introductionmentioning

confidence: 93%

“…In Ref. 13, it is shown that the excess noise factor of this APD is 2.9 at the multiplication factor of 10. The InP-APD is widely used in the laser sensors (e.g., in Ref.…”

Section: Introductionmentioning

confidence: 98%

“…We additionally We developed the APD array by utilizing our guardring-free planer AlInAs-APD technology. 13 The conceptual design, theoretical performance, and its comparison with the evaluated results are shown in the past literature. 13 To our knowledge, there has been no literature on laser sensors using AlInAs-APD.…”

Section: Introductionmentioning

confidence: 99%

“…13 The conceptual design, theoretical performance, and its comparison with the evaluated results are shown in the past literature. 13 To our knowledge, there has been no literature on laser sensors using AlInAs-APD. This is a linear mode APD and can be operated well in the required temperature of 300 K. In addition, this has a feature of a low excess noise factor.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration on range imaging of 256 × 256 pixels and 30 frames per second using short wavelength infrared pulsed time-of-flight laser sensor with linear array receiver

et al. 2016

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"Demonstration on range imaging of 256 × 256 pixels and 30 frames per second using short wavelength infrared pulsed time-of-flight laser sensor with linear array receiver," Opt. Eng. Abstract. We demonstrated the range imaging with high resolution of 256 × 256 pixels and high frame rate of 30 frames per second (fps) using a short wavelength infrared pulsed time-of-flight laser sensor, which is suitable for long range imaging. We additionally demonstrated the long range imaging of more than 1 km and wide field of view imaging of 12 deg × 4 deg, 768 × 256 pixels, and 10 fps. For these demonstrations, we developed the linear array devices of the aluminum indium arsenide avalanche photodiode array and silicon germanium bipolar complementary metal oxide semiconductor read-out integrated circuit array. We also deployed the flattop beam illumination optics with the beam division and recombination method and realized efficient line shape illumination. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Phys. Status Solidi A

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We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) imaging applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers. Special attention has been paid to the charge layer in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Hereof, a combination of a p-type grading layer and charge layer is presented. Band-edge profile calculations as well as electro-optical characterization results of the APDs will be discussed in this article. Our optimized APD structures reveal low punch-through and low breakdown voltage of V-pt approximate to 8.5 V and V-bd approximate to 2.3 V, respectively. A maximum gain of M > 300 in the linear operation mode is demonstrated at room temperature and M = 10 has been measured at 20 V bias

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Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes

Cited by 22 publications

References 10 publications

Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

Demonstration on range imaging of 256 × 256 pixels and 30 frames per second using short wavelength infrared pulsed time-of-flight laser sensor with linear array receiver

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

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