Design and Analysis of Spiral Inductors

Haobijam, Genemala; Paily, Roy

doi:10.1007/978-81-322-1515-8

Cited by 29 publications

(17 citation statements)

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“…Variables R L and G denote the loss resistance and impedance in the inductor (L) and capacitor (C O ), respectively, and C Nx , C S , and R S represent the capacitance and resistance associated with the SiN x layer and the ground. The above parameters can be estimated as [13,14]:…”

Section: Methodsmentioning

confidence: 99%

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

et al. 2019

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As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λ g × 0.013 λ g with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results.

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Section: Methodsmentioning

confidence: 99%

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

et al. 2019

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“…The eddy current will add to the Icoil on the inner side (left edge) and subtract from I coil on the outer side (right edge) of the conductor [8]. The current density will be thus, higher on the inner side than on the outer side and result a non-uniform current in the metal turns of the spiral inductor as shown in Fig.…”

Section: ) Eddy Currentmentioning

confidence: 97%

“…In this case, removing the inner most turns results to a much better uniformity of the current distributions. Thus, to minimize eddy current effects most previous studies recommend to simply eliminate the most internal turns by leaving a hole in the middle of the spiral coil [6], [8]. Acting so, why don't we remove more than two or three inners turns and what is the tiein between the number of inner turns causing performance degradation and coils' geometric parametric (d o , d i , s and w)?…”

Section: ) Eddy Currentmentioning

confidence: 99%

Minimizing printed spiral coil losses for inductive link wireless power transfer

Mehri

Ammari

Slama

2016

2016 IEEE Wireless Power Transfer Conference (WPTC)

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This work aims for the design of printed spiral coils (PSC) with high quality factors. This consists in minimizing coil losses represented by proximity and eddy currents losses. For this purpose, specific geometric parameters characterizing spiral coils are shown to have a direct impact on increasing such losses. As a result, to minimize proximity effect, high ratios between the interspace separating two adjacent traces and the trace width are recommended to be used. In addition, to reduce eddy current losses, an empirical equation is developed to determine the optimal inner diameter sizes of the coils. The obtained numerical results confirmed that, using the proposed design constraints, the quality factor of the coils improves by 40 % in average with only 12 % decrease of the coil inductance value. Analytical formulation of the coil quality factor is obtained. Comparing analytical to simulation results, the obtained errors are reduced from 43 % to only 5 % when the recommended design constraints are applied.

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“…As a result of reduced cross‐sectional area, an additional resistance effect on the electric current is apparent. This resistance can be calculated as follows,

R = \frac{l ρ}{W δ ((), 1 - e^{\frac{- t}{δ}})},

where W denotes the width of the metal and t is the metal thickness. In view of the information above, the skin effect is represented by a ladder circuit consisting of an inductor and a resistor in series, which is parallel to R 0 .…”

Section: Surrogate Modeling Of On‐chip Spiral Inductorsmentioning

confidence: 99%

Surrogate modeling and variability analysis of on‐chip spiral inductors

Akso

Soysal

Yelten

2017

Int J Numerical Modelling

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This paper presents an approach to the analysis of on‐chip integrated spiral inductors in terms of parametric variabilities. An enhanced single‐π model is proposed to compensate for high frequency deviations. In addition to the single‐π model parameters, the skin effect and the proximity effect are included in the surrogate model to reflect high frequency behavior much more accurately while retaining a simple structure. Y‐parameters of the equivalent circuit are derived to extract the frequency‐dependent inductance and quality factor representations using the shunt and differential configurations. This study introduces a novel algorithm able to yield model parameter values through iterations converging on the predetermined inductance curve within an error margin of 5%. High‐Q and low‐Q characteristics of inductors arising from process variations were also captured with the proposed algorithm, along with the failure points of the inductance, the quality factor, and the self‐resonance frequency. Variability analysis results demonstrate that the differential configuration is more robust to inductance and quality factor failures, but also that it is more vulnerable to self‐resonance frequency failures.

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Design and Analysis of Spiral Inductors

Cited by 29 publications

References 0 publications

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

Minimizing printed spiral coil losses for inductive link wireless power transfer

Surrogate modeling and variability analysis of on‐chip spiral inductors

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