Design and Analysis of Power Low-Temperature Polysilicon Lateral Double-Diffusion Metal Oxide Semiconductor Field Effect Transistors with Shielding-Trench Structure
Abstract:A new polycrystalline silicon (poly-Si) lateral double-diffusion metal oxide semiconductor field-effect transistor power device combining super-lateral-growth technology and shielding-trench oxide structures (STO-LDMOSFET) is introduced. The trench oxide offers a platform for amorphous silicon lateral growth through excimer laser annealing; this not only enables stable control of the crystallization of poly-Si but also promotes the blocking ability of devices. The breakdown voltages of the manufactured devices… Show more
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