Design and Analysis of Modified Pre-Charge Sensing Circuit for STT-MRAM

Devaraj, G. Prince; Kabilan, R.; Gabriel, J. Zahariya; Muthuraman, U.; Muthukumaran, N.; Swetha, R.

doi:10.1109/icicv50876.2021.9388516

Cited by 50 publications

(3 citation statements)

References 14 publications

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“…Among all the solutions, spintronic devices manipulate data by controlling the spin of electrons, showing advantages in access speed, energy consumption and durability. Representative examples of such devices include STT [6][7][8][9] magnetic memory and SOT [10][11][12][13][14][15][16] magnetic memory. Despite the benefits in reading performance and power consumption, the SOT memory cell requires the assistance of a small in-plane external magnetic field to break the switching symmetry, which negatively impacts the integration density and stability of devices.…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Li,

Liu,

et al. 2024

Preprint

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In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for in-memory computing, with spin-orbit torque (SOT) magnetic random-access memory (MRAM) being a leading area of research. In our study, we numerically demonstrate that a precise combination of damping-like and field-like spin-orbit torques can facilitate precessional magnetization switching. This mechanism enables the binary memristivity of magnetic tunnel junctions (MTJs) through the modulation of the amplitude and width of input current pulses. Building on this foundation, we have developed a scheme for a reconfigurable spintronic logic gate capable of directly implementing Boolean functions such as AND, OR, and XOR. This work is anticipated to leverage the sub-nanosecond dynamics of SOT-MRAM cells, potentially catalyzing further experimental developments in spintronic devices for in-memory computing.

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Section: Introductionmentioning

confidence: 99%

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Li,

Liu,

et al. 2024

Preprint

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“…It's commonly found as part of a larger gadget that includes physical and mechanical components. Such generalpurpose computers, including a personal computer (PC), on the other hand, are designed to be adaptable and suit a wide range of end-user requirements [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A Consumer Application with An Integrated Real-Time Power Theft Detection And Management System

Ravi¹,

Pasunkili²,

Kabilan³

et al. 2022

Proceedings of the International Conference on Intelligent Technologies in Security and Privacy for Wireless Communication, ITS

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Billing by a human operator is exposed to errors due to reading errors since the house's electric power is occasionally positioned in an inaccessible area. The notion of dynamic priority assignment to interruptions is presented, which decreases the delay time for less priority tasks that may become higher priority under certain situations. Interrupt time slicing is also being explored, which can help increase performance. The highest priority activities are completed more frequently and in a shorter amount of time. As a result, it does not need to wait for the slack time of other interrupted with greater priority. If the grid's power is reduced, the power will be maintained and controlled. When low-power generation occurs, our suggested system instantly switches to power management. When there is low power generation, all of the devices are managed based on a priority system and a timing system.

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“…Within the industry, the complementary metal oxide semiconductor (CMOS) compatibility of device materials is very important. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] Among these devices, ferroelectric tunnel junctions (FTJs) are attractive for various neuromorphic applications that could imitate the nervous system of the human brain to overcome the limitations of conventional von Neumann structures. The structure of FTJs is simple, whereby a ferroelectric thin film capable of electric tunneling is inserted between the top and bottom electrodes.…”

mentioning

confidence: 99%

Effect of Al Concentration on Ferroelectric Properties in HfAlO_x‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

Kim

Min

et al. 2023

Advanced Intelligent Systems

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Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) compatibility, non‐destructive operation, and low power consumption. Moreover, doped HfOx‐based FTJs are in the spotlight in terms of neuromorphic engineering as a way of advancing from the von Neumann structure. In particular, Al dopant is effective for inducing ferroelectric properties due to its smaller radius than that of Hf. The optimal concentration of Al varies depending on the device materials and the annealing conditions during deposition. Therefore, in‐depth research is required for neuromorphic applications. Herein, the properties of FTJ devices according to Al doping concentrations are analyzed. Subsequently, using the device with the highest remanent polarization, neuromorphic applications are implemented, including spike‐timing‐dependent plasticity (STDP), paired‐pulse facilitation (PPF), long‐term potentiation, and depression. The characteristics in different frequency regions are also studied to satisfy the demand for fast switching. Finally, the FTJ device is used as a physical reservoir in reservoir computing for efficient processing of time‐dependent inputs.

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Design and Analysis of Modified Pre-Charge Sensing Circuit for STT-MRAM

Cited by 50 publications

References 14 publications

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

A Consumer Application with An Integrated Real-Time Power Theft Detection And Management System

Effect of Al Concentration on Ferroelectric Properties in HfAlO_x‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

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Design and Analysis of Modified Pre-Charge Sensing Circuit for STT-MRAM

Cited by 50 publications

References 14 publications

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

A Consumer Application with An Integrated Real-Time Power Theft Detection And Management System

Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

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Product

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Effect of Al Concentration on Ferroelectric Properties in HfAlO_x‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications