Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology

Ahamed, Raju; Varonen, Mikko; Parveg, Dristy; Najmussadat,; Kantanen, Mikko; Halonen, K.

doi:10.1109/iscas45731.2020.9181170

Cited by 5 publications

(7 citation statements)

References 7 publications

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“…In a second step, the expected power levels at the detector input have to be identified. Transistor-based power detectors in SiGe feature dynamic ranges between 30 and 40 dB [21], [22]. To find out whether this is sufficient for BIST purposes, a study of different test approaches is performed.…”

Section: B Power Levels In Typical Test Scenariosmentioning

confidence: 99%

“…Sometimes, even the antennas are differential [30]. Typical millimeter-wave power detectors, on the other hand, are circuits with single-ended high-frequency inputs, e.g., [21], [22]. This poses the question of whether it is possible to correctly determine the power of a differential CUT with conventional single-ended detectors.…”

Section: Differential Cutsmentioning

confidence: 99%

“…The normalized complete model for the CC-based detector from (19) is plotted in Fig. 6 together with its approximations (21) at 300 K. We can use the PPE defined in (1) to judge the quality of the approximations. Assuming that PPE ≤ ±1 dB as an acceptable error, the square-law model follows the complete model up to an input amplitude of approximately 60 mV, whereas the peak detector approximation is valid for amplitudes larger than 40 mV.…”

Section: A Cc-based Detectormentioning

confidence: 99%

“…In contrast to the CC-based detector, the CE-based detector allows tuning of the output voltage range via R o and I 1 . Furthermore, the ratio of both detectors' output voltages in the square-law range, (28) divided by (21), is…”

Section: B Ce-based Detectormentioning

confidence: 99%

“…Because (28) contains a 1/V 2 T -term, the largest temperature dependence is expected from the CE-based detector. In its square-law range, the CC-based detector is slightly more robust against temperature variation as one occurrence of V T cancels in (21). When this detector is driven into its peak range, the temperature variation becomes even less because only the logarithmic correction contains V T -dependent terms.…”

Section: Temperature and Process Variationmentioning

confidence: 99%

See 4 more Smart Citations

Differential-Mode Power Detection for Built-In Self-Test of SiGe Automotive Radar Transceiver Front Ends

Wenger,

Ng,

Korndörfer

et al. 2024

IEEE Trans. Microwave Theory Techn.

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Recently, the feasibility of differential-mode power detection for built-in self-test (BIST) in millimeter-wave SiGe transceiver front ends has been demonstrated. In this work, a system analysis of typical BIST scenarios is performed. Specifications for the input power levels as well as the accuracy of power detectors are derived from this analysis. A need for at least two different differential detector architectures is identified. Two detectors are derived from the differential power measurement concept, analyzed, and implemented in the 76-81-GHz automotive radar frequency band. They feature a low power consumption of 500 µW and, to the authors' best knowledge, the lowest published circuit areas of approximately 0.005 mm 2 while still being input matched to the differential 100 system impedance. Both these characteristics are essential to keep the overhead of the BIST minimal. With dynamic ranges of 30 dB and up to 46 dB for the two different architectures, the differential power detector concept can achieve sufficient performance for BIST applications. The robustness against process and temperature effects as well as noise is analyzed and reported for both detectors.

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Section: B Power Levels In Typical Test Scenariosmentioning

confidence: 99%

Section: Differential Cutsmentioning

confidence: 99%

Section: A Cc-based Detectormentioning

confidence: 99%

Section: B Ce-based Detectormentioning

confidence: 99%

Section: Temperature and Process Variationmentioning

confidence: 99%

See 3 more Smart Citations

Differential-Mode Power Detection for Built-In Self-Test of SiGe Automotive Radar Transceiver Front Ends

Wenger,

Ng,

Korndörfer

et al. 2024

IEEE Trans. Microwave Theory Techn.

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Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?

Wenger,

Meinerzhagen,

Issakov

2024

IEEE Access

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With automotive radar and 5G/6G communications, mass-market applications for millimeterwave circuits in silicon technologies have been identified or established in recent years. For high-volume, millimeter-wave integrated circuits, operating roughly between 30 GHz and 300 GHz, testability is a major concern, both from an overall cost as well as a quality assurance perspective. A solution for cost effective, low-overhead test of millimeter-wave integrated circuits is the integration of built-in self-test (BIST) features into the high-frequency front-end. Because BIST is an emerging topic in high-frequency circuit design, the field is still very fragmented. A plethora of different system concepts as well as building blocks have been proposed in recent years. This paper tries to provide a comprehensive overview of the state of the art in millimeter-wave BIST in an attempt to drive the field towards identification of standardized self-test solutions.INDEX TERMS Built-in self-test, CMOS, millimeter-wave transceivers, SiGe, silicon.

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Design and Analysis of a Practical RMS Power Detector Using Power MOSFET

Ravanne

Then

et al. 2021

2021 IEEE 12th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON)

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Power detector chip design and fabrication have experienced significant advancement with the emergence of various technological processes such as BiCMOS and CMOS.With the continuous downscaling of semiconductor devices, chip fabrication has become more complex and less accessible. This paper investigates the design and analysis of RMS power detectors using power MOSFET. A BSIM3 model developed from extracted parameters of the power MOSFET datasheet was employed to design and simulate the RMS power detector. A cascode structure with a current-source load was used to realize high conversion gain and sensitivity. RMS detection is realized by exploiting the square-law principles of MOS transistors in the strong inversion region. The proposed RMS detector targets practical applications in the agricultural sector and educational institutions. The RMS power detector was fabricated using FR4 PCB substrate. The measurement results at 2 GHz suggest that the RMS power detector employed using power MOSFET on FR4 PCB substrate can detect RF power.

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Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology

Cited by 5 publications

References 7 publications

Differential-Mode Power Detection for Built-In Self-Test of SiGe Automotive Radar Transceiver Front Ends

Differential-Mode Power Detection for Built-In Self-Test of SiGe Automotive Radar Transceiver Front Ends

Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?

Design and Analysis of a Practical RMS Power Detector Using Power MOSFET

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