Design and analysis of an X-band MMIC "bus-bar" power combiner

Marsh, S.P.; Lau, Doris; Sloan, R.; Davis, L.E.

doi:10.1109/edmo.1999.821479

Cited by 11 publications

(6 citation statements)

References 3 publications

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“…On the other hand, to overcome the geometric limitation of the combining structure for dc biasing network designs, the "bus-bar" [26], [27] technique is utilized to solve this problem. In [26], [27], the dc path is embedded in the combining network, and optimized the RF performances by full EM simulation.…”

Section: B W-band Pa With 16-way Power Combining [21]mentioning

confidence: 99%

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Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Hsiao

Tsai

Liao

et al. 2013

IEEE Trans. Microwave Theory Techn.

105

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In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies.Index Terms-CMOS, high output power, impedance transformation, millimeter-wave, power amplifier, power combining, wideband.

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Section: B W-band Pa With 16-way Power Combining [21]mentioning

confidence: 99%

“…In [26], [27], the dc path is embedded in the combining network, and optimized the RF performances by full EM simulation. In this work, we realize this technique by connecting the open stubs in the matching network directly.…”

Section: B W-band Pa With 16-way Power Combining [21]mentioning

confidence: 99%

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Hsiao

Tsai

Liao

et al. 2013

IEEE Trans. Microwave Theory Techn.

105

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“…12. The output stage is designed using a bus-bar combiner followed by a tree structure [22]. The bus-bar offers a compact way to combine multiple cells and also a direct path for the dc feed.…”

Section: Power Amplifier Designmentioning

confidence: 99%

Octave Band Linear MMIC Amplifier With +40-dBm OIP3 for High-Reliability Space Applications

Silva

Angelov

Zirath

2016

IEEE Trans. Microwave Theory Techn.

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A systematic design procedure for highly linear and reliable amplifiers is proposed. The procedure deals with nonlinear modeling, junction temperature prediction methods, and circuit design techniques. A wideband linear monolithic microwave integrated circuit power amplifier based on a space-qualified GaAs process for C-band and extended C-band multicarrier satellite transponder is reported and described. The amplifier uses a bus-bar combiner in the power stage reaching an output power of 26.7 dBm at 1-dB compression point, with a small signal gain above 25 dB in the operation band between 3 and 6 GHz. The output third-order intercept point reaches levels above 40 dBm. The design ensures high reliability keeping the junction temperature below 112°C.Index Terms-Bus-bar combiner, C-band, high linearity, junction temperature, monolithic microwave integrated circuit (MMIC), nonlinear modeling, power amplifier. The authors are with the Microwaves

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“…10.51 can therefore be considered as a parallel connection of four independent two-way combiners (T-Junctions) [112]. The output power is tapped off at the symmetry points (O 1 → O 4 ) along the bus-bar.…”

Section: Bus-bar Combinermentioning

confidence: 99%

Power Combining

general

2009

High Efficiency RF and Microwave Solid State Power Amplifiers

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Power amplifiers are employed in a variety of system applications, where the required power levels are largely different, varying from mW to kW [1,2]. Consequently, a wide variety of PA realizations results, from travelling-wave tube amplifiers in very high power systems [3,4], in satellite payloads or radars, to solid-state amplifiers for medium-low power systems [5,6], such as wireless communication handsets. The request for high output power levels is influencing device technologies adopted for PA module realization [7,8]. Prior to the development of solid state devices, microwave power amplification and generation were mainly based on the use of vacuum tubes [9, 10], including magnetron, klystron and travelling-wave implementations (TWTAs) [4,11]. These devices still remain in use at kilowatt levels, where solid-state devices cannot compete so far.Nevertheless, the development of high power microwave solid-state device technologies (GaAs HEMT or HBT, GaN HEMT, etc.) may offer an order-of-magnitude improvement in reliability and reduction in size, weight, and low-voltage power-supply requirements as compared to vacuum devices. However, the output power attainable from a single solid-state device is basically limited by thermal and impedance matching problems. To meet system requirements it is therefore mandatory to combine several devices, thus attaining higher power levels. Many power splitting/combining schemes have been investigated and developed, involving different technologies and propagation media, ranging from metal waveguides (cavities, microstrips, striplines, etc.) where the power is confined into a limited region, to open space configurations [12][13][14].Devices involved in power splitting/combining operations are referred to as power splitters/ combiners and they play a key role in the design of high power PA, while being also fundamental components in designing mixers [15], multipliers and oscillators [16,17], or other linear and nonlinear circuits [18]. Moreover, since the proposed schemes can often be adopted for both the tasks of power division and combination, the terms power combining and power splitting are usually adopted simultaneously or interchangeably. Due to their intrinsic reciprocal characteristic in fact, the same device can alternatively be viewed as a power combiner or as a power splitter, depending on the selection of its input and output ports.The key features of power splitting/combining devices are clearly their insertion loss (related to the efficiency), bandwidth and size. The techniques adopted for the optimization of device performance are strictly related to the type of splitting/combining structure and to the selected realization technology. High Efficiency RF and Microwave Solid State Power Amplifiers

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Design and analysis of an X-band MMIC "bus-bar" power combiner

Cited by 11 publications

References 3 publications

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Octave Band Linear MMIC Amplifier With +40-dBm OIP3 for High-Reliability Space Applications

Power Combining

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