Design and Analysis of a Field Plate Engineered High Electron Mobility Transistor for Enhanced Performance

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

“…The various physical parameters of various materials like silicon, Gallium arsenide, Gallium nitride, Silicon carbide, Gallium oxide and Diamond are depicted in Table I [21]- [23]. The material properties of GaN are very unique and superior to conventional material systems such as a lower intrinsic concentration and therefore lower leakage and noise related problems ensuring a high temperature operation besides higher critical electric field for high power breakdown applications due to its wide bandgap [24], [25]. The higher saturation velocity manifests into higher current capacity.…”