Description of the ideality factor of a-Si:H photovoltaic cells under different illumination intensity levels

Tarabsheh, Anas Al

doi:10.1063/1.4918286

Cited by 5 publications

(5 citation statements)

References 15 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In other cases, they cited their experimental results on Si, CIGS, organic, and plastic solar cells [29,[181][182][183][184][185][186][187][188][189][190]. In another study, they cite them as an example that R s is small [180], while in another case they cite [21] mentioning that is not based on an electrical model, with no clear explanation for this [191].…”

Section: Introductionmentioning

confidence: 99%

Solar cell parameter accuracy improvement, via refinement of the Co-Content function. Part 1: theoretical analysis

Rangel-Kuoppa¹

2022

Eng. Res. Express

108

View full text Add to dashboard Cite

In this Part 1 of this series of articles, the accuracy on the obtention of the shunt resistance (Rsh ), the series resistance (Rs ), the ideality factor (n), the light current (Ilig ), and the saturation current (Isat ), via the use of the Co-content function CC(V, I)= ∫0 V(I-Isc)dV (where Isc =I(V=0) ) is investigated theoretically, as function of the number of measured points per voltage (PV ) and percentage noise (pn ). Reasonable values are obtained for Rsh , Rs , and Ilig , with PV = 11 measurement points per V if the pn is 0.1 % or less. For a reasonable determination of n at least PV = 101 measurement points per V are needed. Isat determination requires pn of 0.01 % or lower with at least PV = 101 measured points per V and should be evaluated at large values of V. The results given in this Part 1 are used in Part 2 to discuss the reported application of the CC(V,I) to obtain Rsh , Rs , n, Ilig , and Isat found in the literature.

show abstract

Section: Introductionmentioning

confidence: 99%

Solar cell parameter accuracy improvement, via refinement of the Co-Content function. Part 1: theoretical analysis

Rangel-Kuoppa¹

2022

Eng. Res. Express

108

View full text Add to dashboard Cite

show abstract

“…where I D is the diode's (PN-junction) current, I s is the reverse-saturation current, V t is the thermal voltage [28] (equal to 25.9 mV at 300 K), n is the ideality factor [29] that depends on the exact recombination mechanism, and I ph is the maximum generated current (short-circuit current) from the PV cell. Figure 2b shows the standard equivalent model (SEC) of N identical series-connected PV cells operating under the same ambient conditions.…”

Section: Modified Standard Equivalent-circuit (Msec)mentioning

confidence: 99%

“…where D I is the diode's (PN-junction) current, s I is the reverse-saturation current, t V is the thermal voltage [28] (equal to 25.9 mV at 300 K), n is the ideality factor [29] that depends on the exact recombination mechanism, and ph I is the maximum generated current (short-circuit current) Several works in the past investigated different models for PV cells [5][6][7][8][9][10][11][12][13]. The interest of the researchers and manufacturers is driven by a need to optimize new technologies and to study their behavior in different contexts and under varying conditions.…”

Section: Modified Standard Equivalent-circuit (Msec)mentioning

confidence: 99%

Series Connected Photovoltaic Cells—Modelling and Analysis

2017

View full text Add to dashboard Cite

As solar energy costs continue to drop, the number of large-scale deployment projects increases, and the need for different analysis models for photovoltaic (PV) modules in both academia and industry rises. This paper proposes a modified equivalent-circuit model for PV modules. A PV module comprises several series-connected PV cells, to generate more electrical power, where each PV cell has an internal shunt resistance. Our proposed model simplifies the standard one-diode equivalent-circuit (SEC) model by removing the shunt resistance and including its effect on the diode part of the circuit, while retaining the original model accuracy. Our proposed equivalent circuit, called here a modified SEC (MSEC), has less number of circuit elements. All of the PV cells are assumed operating under the same ambient conditions where they share the same electric voltage and current values. To ensure the simplification did not come at a reduction in the accuracy of the SEC model, we validate our MSEC model by simulating both under the same conditions, calculate, and compare their current/voltage (I/V) characteristics. Our results validate the accuracy of our model with the difference between the two models falling below 1%. Therefore, the proposed model can be adopted as an alternative representation of the equivalent circuit for PV cells and modules.

show abstract

“…. The continuity equation for the electrons (similar equations can be applied for holes as well) [16] can be expressed as: Figure 4 where the analytical model well reproduces the measured J/V-characteristics of the a-Si:H PV cell. The structure p-i-n is preferred since, according to Beer's absorption law, most of the incident light is absorbed close to the front of the illuminated layer [22], and the mobility-lifetime product p p   value of holes in a-Si:H cells is less than n n   for electrons [23].…”

Section: Discussion and Resultsmentioning

confidence: 84%

“…This paper applies the equations of the model developed by Al Tarabsheh [16] which calculate the current voltage characteristics of a-Si:H PV cells. In this model, the Poisson and continuity equations for both types of carriers (electrons and holes) are solved.…”

Section: Discussion and Resultsmentioning

confidence: 99%

Calculation of the Shunt Resistance across the Absorber Layer of Hydrogenated Amorphous Silicon Photovoltaic Cells

Tarabsheh

Akmal

2019

2019 6th International Conference on Electrical and Electronics Engineering (ICEEE)

View full text Add to dashboard Cite

In contrast to the existing conventional models, that describe the shunt resistance of hydrogenated amorphous silicon as a uniform resistance a cross the absorber layer (ilayer), our paper calculates the shunt resistance of a-Si:H PV cells as a function of the location across the i-layer resulting in a more detailed description of the shunt resistance. The photogeneration of the electron-hole pairs depend the photons' wavelength values and the potential across the PV cell. The shunt resistance exists because of the current leakage between the front-and back-contact layers within the i-layer. The electric current of the electrons and holes is calculated, in this paper, by solving the Poisson, continuity, and transport equations at each location within the i-layer for wide range potential values. In this article, the contribution of electrons and holes on the shunt leakage is calculated for each carrier independently by separating the current density/voltage (J/V) curves of the electrons and of the holes at each location within the i-layer. This work proves that the effective value of the location-dependent shunt resistances due to the electrons and holes equals the effective shunt resistance of the PV cell calculated from the total J/V.

show abstract

Description of the ideality factor of a-Si:H photovoltaic cells under different illumination intensity levels

Cited by 5 publications

References 15 publications

Solar cell parameter accuracy improvement, via refinement of the Co-Content function. Part 1: theoretical analysis

Solar cell parameter accuracy improvement, via refinement of the Co-Content function. Part 1: theoretical analysis

Series Connected Photovoltaic Cells—Modelling and Analysis

Calculation of the Shunt Resistance across the Absorber Layer of Hydrogenated Amorphous Silicon Photovoltaic Cells

Contact Info

Product

Resources

About