Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework

Siracusano, Giulio; Tomasello, Riccardo; d’Aquino, M.; Puliafito, Vito; Giordano, A.; Azzerboni, B.; Braganca, P. M.; Finocchio, G.; Carpentieri, Mario

doi:10.1109/tmag.2018.2799856

Cited by 18 publications

(7 citation statements)

References 73 publications

(77 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…J STT critical did not change significantly with increase in β STT , as shown in Figure 3. This result was consistent with observations made by Carpentieri et al [24]. In addition to this, the rate of increase was relatively J STT critical , with β STT greater for larger values of α.…”

Section: Combined Stt-sot Induced Switching In Pma-mtjsupporting

confidence: 93%

Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

Wasef

Fariborzi

2021

Micromachines

View full text Add to dashboard Cite

Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical current densities under combined injection. We included the damping–like torque (DLT) and field-like torque (FLT) components of both the STT and SOT. The results were derived when the ratio of the FLT to the DLT component of the SOT was positive. We observed that the relationship between the critical SOT and STT current densities depended on the damping constant and the magnitude of the FLT component of the STT and the SOT current. We also noted that, unlike the FLT component of SOT, the magnitude and sign of the FLT component of STT did not have a significant effect on the STT and SOT current densities required for switching. The derived results agreed well with micromagnetic simulations. The results of this work can serve as a guideline to model and develop spintronic devices using a combined injection of STT and SOT currents.

show abstract

Section: Combined Stt-sot Induced Switching In Pma-mtjsupporting

confidence: 93%

Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

Wasef

Fariborzi

2021

Micromachines

View full text Add to dashboard Cite

show abstract

“…9. The precharge sense amplifier evaluates the complementary outputs, 40 (a) Precharge phase: Clk is at Logic "0" during the precharge phase, and both the out and out outputs are at logic high "1". (b) Evaluation phase: In this phase, clk = 1 and outputs are analyzed based on the volatile and non-volatile input states.…”

Section: Implementation Of Vcma-based Logic Circuitsmentioning

confidence: 99%

Performance Analysis of Voltage-Controlled Magnetic Anisotropy MRAM-Based Logic Gates and Full Adder

Jangra¹,

Duhan²

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In the last decade, spintronics technology has been extensively researched for future non-volatile memories use. VCMA-MRAM, exploits the voltage controlled magnetic anisotropy (VCMA) principle to write data into magnetic tunnel junctions. This paper has implemented AND/NAND, OR/NOR, XOR/XNOR, and Full Adder using CMOS/VCMA models. Three models of VCMA have been used in this paper for performance analysis and comparison – STT-assisted thermally activated VCMA, STT-assisted precessional VCMA, and Precessional VCMA. The performance of these circuits has been analyzed, and the results have been compared within VCMA modules. Performance parameter like energy consumption and delay has been analyzed in this paper. From the gate latency (delay) and energy consumption analysis, it has been derived that the precessional VCMA-based gates perform better in these domain as compared to the other VCMA model based gates. It is observed that performance improvements of ~20% and ~60% have been seen over STT-assisted precessional VCMA and STT-assisted thermally activated VCMA and based gates in terms of gate latency at 1.2 V operating voltage and improvement of around 80 % is seen in terms of energy over STT-assisted precessional VCMA, respectivel

show abstract

“…These measurements show that both t 0 and ∆t present in general skewed statistical distributions [16, 19-21, 27, 42, and 43]. The stochasticity of the STT-driven dynamics has also been analyzed theoretically in a few publications [45][46][47][48][49][50], but there has been little synergy between the experimental and theoretical approaches. At the experimental level, the choice of a specific distribution to fit the data has been seldom guided by physical considerations.…”

Section: Introductionmentioning

confidence: 99%

Deterministic and stochastic aspects of current-induced magnetization reversal in perpendicular nanomagnets

et al. 2023

View full text Add to dashboard Cite

We study the incubation and transition times that characterize the magnetization switching induced by spin-orbit torques in nanomagnets with perpendicular anisotropy. We present a phenomenological model to interpret the dependence of the incubation time on the amplitude of the voltage pulse and assisting magnetic field, and estimate the volume of the seed domain that triggers the switching. Our measurements evidence a correlation between the incubation and transition times that is mediated by the temperature variation during the electric pulse. In addition, we discuss the stochastic distributions of the two times in terms of the energy barriers opposing the nucleation and expansion of the seed domain. We propose two models based on the log-normal and gamma functions to account for the different origin of the variability of the incubation and transition times, which are associated with a single nucleation barrier and multiple pinning sites, respectively.

show abstract

Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework

Cited by 18 publications

References 73 publications

Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

Performance Analysis of Voltage-Controlled Magnetic Anisotropy MRAM-Based Logic Gates and Full Adder

Deterministic and stochastic aspects of current-induced magnetization reversal in perpendicular nanomagnets

Contact Info

Product

Resources

About