Describing the analog resistance change of HfOx-based neuromorphic synapses using a compact series trap-assisted tunneling and Ohmic conduction model
Fabia F. Athena,
Eric M. Vogel
Abstract:Changes in the resistance of Ti/HfOx synapses are known to be governed by a thin-oxide barrier associated with the oxidation/reduction of a Hf-rich conducting filament (CF). However, experimental characterization of the CF is challenging. Critical physical properties and processes, such as the barrier location, time-dependent thickness during analog pulsing, and the temperature-effect on current, need to be better established. In this work, a compact model based on Trap-Assisted-Tunneling and Ohmic transport i… Show more
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