Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

Lee, Hui Jing; Gamel, Mansur Mohammed Ali; Ker, Pin Jern; Jamaludin, M. Z.; Wong, Yin How; Yap, Keem Siah; Willmott, Jon R.; Hobbs, Matthew J.; David, J.P.R.; Tan, Chee Hing

doi:10.1016/j.mssp.2022.107135

Cited by 4 publications

(3 citation statements)

References 28 publications

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“…The radiative and Auger recombination coefficients of In 0.83 Ga 0.17 As are taken to be 1.43 × 10 −10 cm 3 /s and 7 × 10 −27 cm 6 /s, respectively [22]. The material parameters for InP, In 0.83 Ga 0.17 As, and In 0.83 Al 0.17 As in the simulation are shown in Table 2 [23][24][25][26][27]. The material parameters for InP are assumed to be default in the Atlas module.…”

Section: Methodsmentioning

confidence: 99%

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Jiao,

Guo,

Zhou

et al. 2024

Electronics

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In the planar-type InGaAs photodetector (PD) structure, a diffusion barrier has the effect of modifying the zinc diffusion profile in the interface between the cap and the absorption layer to improve device performance. In this work, an n-type In0.83Ga0.17As diffusion barrier layer (DBL) is employed between the In0.83Al0.17As cap layer and the low-doped In0.83Ga0.17As absorption layer of a lattice-mismatched metamorphic In0.83Ga0.17As PD. The device performance of the In0.83Ga0.17As PDs in terms of dark current, quantum efficiency, and capacitance were simulated and compared to experimental results. The effects of the thickness and doping concentration of the DBL on PD performance were analyzed and shown to be optimized at both 300 K and 200 K. Based on the simulation results, the electron concentration of the DBL is recommended to be 3×1016–5×1016 cm−3 and a thickness of 0.1 μm is suggested.

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Section: Methodsmentioning

confidence: 99%

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Jiao,

Guo,

Zhou

et al. 2024

Electronics

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“…InGaAs/InP APDs are mainly used in the near-infrared band, with fast response speed, small size, easy coupling with optical fibers and devices, and strong practicability. However, its disadvantage is the low absorption coefficient and detection efficiency at 1550 nm band 5,6 . In recent years, surface plasmons (SPs) have attracted many attentions for their superior optical properties [7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Chen¹,

Xie²,

Xie³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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“…Egorenkov et al have proposed that a long response time can render temporal shaping of the laser pulse, leading to ineffective illumination on the surface of the photocathode and a reduction in the photoemission performance [ 24 ]. These works demonstrate that the response times of NEA photocathode materials are strongly dependent on the photon energy of the incident light, which is also affected by the electron diffusion length [ 30 ] and back interface recombination velocity [ 31 ]. In x Ga 1−x As with an In component of 0.15 has been employed as a photoemission layer in a NEA photocathode, which has been verified as the optimal cathode composition for detection at 1064 nm [ 32 ].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region

et al. 2023

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Benefiting from a high quantum efficiency, low thermal emittance, and large absorption coefficient, InxGa1−xAs is an excellent group III–V compound for negative electron affinity (NEA) photocathodes. As the emission layer, InxGa1−xAs, where x = 0.15, has the optimal performance for detection in the near-infrared (NIR) region. Herein, an NEA In0.15Ga0.85As photocathode with Al0.63Ga0.37As as the buffer layer is designed in the form of a transmission mode module. The electronic band structures and optical properties of In0.15Ga0.85As and Al0.63Ga0.37As are calculated based on density functional theory. The time response characteristics of the In0.15Ga0.85As photocathode have been fully investigated by changing the photoelectron diffusion coefficient, the interface recombination velocity, and the thickness of the emission layer. Our results demonstrate that the response time of the In0.15Ga0.85As photocathode can be reduced to 6.1 ps with an incident wavelength of 1064 nm. The quantum efficiency of the In0.15Ga0.85As photocathode is simulated by taking into account multilayer optical thin film theory. The results indicate that a high quantum efficiency can be obtained by parameter optimization of the emission layer. This paper provides significant theoretical support for the applications of semiconductor photocathodes in the near-infrared region, especially for the study of ultrafast responses in the photoemission process.

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Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

Cited by 4 publications

References 28 publications

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region

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