Depth profiling of GaN by cathodoluminescence microanalysis

Fleischer, K.; Toth, Milos; Phillips, M. R.; Zou, Jin; Li, G.; Chua, Soo-Jin

doi:10.1063/1.123460

Cited by 87 publications

(79 citation statements)

References 15 publications

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“…Previous work has suggested as yet unidentified point defects and impurities as an alternative explanation for this blue emission. 20 More recent work provides evidence to correlate broad ϳ2.8 eV emission to the presence of O, in particular a transition from a substitutional oxygen donor (O N ) level to the V Ga -O N complex acceptor. 21 In order to identify the source of near-interface doping and defects, we obtained low temperature ͑10 K͒ CLS and CL images in a cross section of a 5 m-thick sample (A 2 ,n int ϭ1.6ϫ10 15 e/cm 2 ), which was also pretreated with ZnO buffer layer.…”

Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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Cathodoluminescence ͑CL͒ imaging and temperature-dependent cathodoluminescence spectroscopy ͑CLS͒ have been used to probe the spatial distribution and energies of electronic defects near GaN/Al 2 O 3 interfaces grown by hydride vapor phase epitaxy ͑HVPE͒. Cross sectional secondary electron microscopy imaging, CLS, and CL imaging show systematic variations in defect emissions with a wide range of HVPE GaN/sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry provide a consistent picture of near-interface doping by O out-diffusion from Al 2 O 3 into GaN over hundreds of nanometers. Low-temperature CL spectra exhibit a new donor level at 3.447 meV near the interface for such samples, characteristic of O impurities spatially localized to the nanoscale interface. CLS emissions indicate the formation of amorphous Al-N-O complexes at 3.8 eV extending into the Al 2 O 3 near the GaN/sapphire interface. CLS and CL images also reveal emissions due to excitons bound to stacking faults and cubic phase GaN. The temperature dependence of the various optical transitions in the 10-300 K range provides additional information to identify the near interface defects and impurity doping.

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Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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“…To facilitate this measurement a special trigger is being implemented to avoid bias at low B 0 s lifetimes. The collaboration is also preparing for more complex analyses involving tagged and time dependent CP asymmetry studies for B 0 s and B 0 two body decays, which will enable the determination of the CKM γ phase through U-spin symmetry [6].…”

Section: Analysis Plansmentioning

confidence: 99%

Prospects for CP violation measurements with charmless hadronic B meson decays at LHCb gamma measurements

Hickman¹

2011

Proceedings of 35th International Conference of High Energy Physics — PoS(ICHEP 2010)

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Studies of two and three-body charmless hadronic decays of B mesons have high sensitivity to possible contributions from New Physics. Precision measurements involving these decays will be performed at LHCb, notably those of CP-violating asymmetries. These measurements benefit from a trigger system which is very efficient for hadronic final states and excellent particle identification capabilities. The full programme is reviewed and first studies with 2010 data are presented.

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“…[23,24]. In the framework of naive factorization or QCD factorization [25], it can be shown that, as long as annihilationtype topologies are small, the double ratio of amplitudes λ (3) breaking.…”

Section: Specific Decaysmentioning

confidence: 99%

Methods for measuring new-physics parameters inBdecays

et al. 2005

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Recently, it was argued that new-physics (NP) effects in B decays can be approximately parametrized in terms of a few quantities. As a result, CP violation in the B system allows one not only to detect the presence of new physics (NP), but also to measure its parameters. This will allow a partial identification of the NP, before its production at high-energy colliders. In this paper, we examine three methods for measuring NP parameters. The first uses a technique involving bothb →s and b →d penguin B decays. Depending on which pair of decays is used, the theoretical error is in the range 5-15%. The second involves a comparison of B → πK and B → ππ decays. Although the theoretical error is large ( > ∼ 25%), the method can be performed now, with presently-available data. The third is via a time-dependent angular analysis of B → V 1 V 2 decays. In this case, there is no theoretical error, but the technique is experimentally challenging, and the method applies only to those NP models whose weak phase is universal to all NP operators. A reliable identification of the NP will involve the measurement of the NP parameters in many different ways, and with as many B decay modes as possible, so that it will be important to use all of these methods.

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Depth profiling of GaN by cathodoluminescence microanalysis

Cited by 87 publications

References 15 publications

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Prospects for CP violation measurements with charmless hadronic B meson decays at LHCb gamma measurements

Methods for measuring new-physics parameters inBdecays

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