Depth profile investigation of the incorporated iron atoms during Kr+ ion beam sputtering on Si (001)

Effects of Ion Beam Etching on the Nanoscale Damage Precursor Evolution of Fused Silica

“…Increasing the removal depth of IBE gradually is helpful to mitigate the impurity contamination and raise the LIDT. In addition, a disturbed layer containing lattice dislocation, vacancy, and displacement is formed as a result of Ar + ion bombardment, which is the subsurface damage that is different from the main material on the dielectric constant [29,30]. The volume inhomogeneities of the disturbed layer induced by IBE cannot be neglected.…”

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

“…The dominant contribution of FeSi 2 was evidenced, which is affected by a variable fraction of Fe-rich silicide (Fe 3 Si). X-ray reflectivity (XRR) was also employed to determine the variations in the Fe depth profile, finding larger in-depth metal distribution in patterned samples [115].…”

“…They only reported a ripple pattern for an intermediate fluence. Following their previous work [115], they studied the samples by XRR. These studies showed the incorporation of Fe atoms in a 5 nm layer below the surface, with a maximum density at a depth of about 3-4 nm.…”

Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

“…Indications for a phase separation leading to formation of silicide phases in the dots and ripple ridges, rather than pure collisional effects, were discovered when comparing pattern formation for co-deposited atoms with similar mass such as Fe and Cu, Pd and Ag as well as W and Au [2,10,11]. Xray absorption near edge spectroscopy on Fe containing irradiated surfaces also supports the formation of silicide phases [12].…”