Depth measurement technique for extremely deep holes using back-scattered electron images with high voltage CD-SEM

Nishihata, Takahiro; Osaki, Mayuka; Tanaka, Maki; Yamamoto, Takahiro; Hamaguchi, Akira; Ida, Chihiro; Suzuki, Yoshiharu

doi:10.1117/12.2514799

Cited by 2 publications

(3 citation statements)

References 1 publication

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“…Nishihata et al [66] have reported a technique for measuring HAR hole depth using a high-voltage SEM (HV-SEM). BSE generated by HV-SEM includes BSE with high energy.…”

Section: High-aspect Ratio (Har) Contact Holesmentioning

confidence: 99%

Electron microscopy in semiconductor inspection

Nakamae

2021

Meas. Sci. Technol.

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Currently, semiconductor devices are manufactured in a technology node of several nanometers. Electron microscopy is mainly used in semiconductor inspection in manufacturing stages since accelerated electrons have wavelengths of nanometers or less, and a high spatial resolution can be expected. Among various electron microscopes since the scanning electron microscope (SEM) can observe the sample as it is without processing the sample, the SEM-based inspection instrument is mainly used at each stage of manufacturing the semiconductor device. The paper presents a review of SEM-based electron microscopy in semiconductor inspection. First, an overview of electron microscopy is described to understand the electron-sample interaction, the characteristics of electrons emitted from an irradiated specimen, charging, noise, and so on. Next, application areas such as mask inspection are introduced. Finally, future challenges are discussed.

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“…Nishihata et al [66] have reported a technique for measuring HAR hole depth using a high-voltage SEM (HV-SEM). BSE generated by HV-SEM includes BSE with high energy.…”

Section: High-aspect Ratio (Har) Contact Holesmentioning

confidence: 99%

Electron microscopy in semiconductor inspection

Nakamae

2021

Meas. Sci. Technol.

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“…Methods for evaluating cross-sectional shape using CD-SEM top-down images include multiple-parameter profile characterization (MPPC) 2,3 and depth measurement using image signals. 4,5 As for MPPC, the target cross section is modeled as a single trapezoid, and an image index for evaluating sidewall inclination and corner roundness is defined. As for depth measurement, the relationship between the width and depth of a trench structure and the image signal from bottom of the trench is modeled, and the depth is evaluated from the measured signal level and width of the trench.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantification of three-dimensional pattern-shape variation with CD-SEM top-down image

Osaki

Yasui

Tanaka

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

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The shrinkage of circuit patterns for improvement of the semiconductor device performance has reduced the tolerances in production. To fit in the tolerances, technologies for improving the uniformity of three-dimensional (3D) shapes of circuit patterns inter-or intra-wafers has been developed. Then, we developed a method for quantifying variations in 3D shapes by critical-dimension scanning electron microscopy (CD-SEM), which can measure widths of circuit patterns with high sensitivity. Since variations in the SEM-image signal are caused by 3D-shape variations, in the method, multiple feature values representing the signal detect shape variations. To compare the effect of the variation in each feature value on the shape variation, the amount of variation in the feature values was normalized by local variations in a reference image. Evaluation on etched wafers showed that several features exhibited independent variation trends that were larger than the local fluctuation. Cross-sectional verification confirmed that one of the feature values correlated with the width at the middle height that cannot be seen in top-view, and variations of 0.24 nm can be detected. It is expected that adjusting processing conditions based on this variation trend will efficiently improve the uniformity of the 3D shape.

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Depth measurement technique for extremely deep holes using back-scattered electron images with high voltage CD-SEM

Cited by 2 publications

References 1 publication

Electron microscopy in semiconductor inspection

Electron microscopy in semiconductor inspection

Quantification of three-dimensional pattern-shape variation with CD-SEM top-down image

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