Depth dependence of optical property beyond the critical thickness of an InGaN film

Teng, Chih-Chung; Wang, Hsiang‐Chen; Tang, Tsung-Yi; Lu, Yen-Cheng; Cheng, Yung‐Chen; Yang, C. C.; Ma, Kai-Tung; Wang, Weiming; Hsu, Chih-Wei; Chen, Li-Chiou

doi:10.1016/j.jcrysgro.2005.12.012

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…To date, this discrepancy between theory and experiment remains not well understood. Early studies 18–22 focused only on the properties of thick InGaN layers, well beyond the critical thickness and fully relaxed.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Pantzas

Patriarche

Orsal

et al. 2011

Physica Status Solidi (a)

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International audienceIn this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise to accommodate the increasing strain energy of the InGaN layer. Three distinct stages of growth have been identified. First, a homogeneous, 2D InGaN layer forms, pseudomorphically strained on the underlying GaN. Then, at around 30 nm large lateral fluctuations of the indium composition are observed and a second pseudomorphic layer, composed of indium-rich and indium-poor clusters, is formed. Finally induces a 2D/3D transition at 60 nm and a 3D InGaN layer is formed

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Section: Introductionmentioning

confidence: 99%

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Pantzas

Patriarche

Orsal

et al. 2011

Physica Status Solidi (a)

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“…Thus, frequently it is necessary to use TEM measurements together with other approaches [12]. Additional spectroscopic techniques, such as cathodoluminescence, may also give information on the composition distribution in semiconductors [13,14]; however, they do not provide direct evidence of the atomic nature of the compositional differences.…”

Section: Introductionmentioning

confidence: 99%

Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

et al. 2016

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The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

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The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique

Yusof

Hassan

et al. 2021

Materials Research Bulletin

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Depth dependence of optical property beyond the critical thickness of an InGaN film

Cited by 6 publications

References 14 publications

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique

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