Dépôt d'alliages amorphes NixAg1 - x par pulvérisation RF ; étude en temps réel de leurs cinétiques de cristallisation

Protin, L.; Grenet, J.; Fleury, Guillaume

doi:10.1051/rphysap:019860021012077500

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1987

1991

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Cited by 6 publications

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“…So, we have determined that amorphous thin films may be obtained in the composition range 30 to 50 at yo Ag. Moreover, these films are aniorphous up to 400 K, the temperature a t which crystallization begins [3].…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Electrical and magnetic properties of amorphous NixAg1−x thin films

Zeghib¹,

Bas²,

Vautier³

1987

Phys. Stat. Sol. (a)

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Section: Methodsmentioning

confidence: 99%

“…sputtering on substrates remained a t 88 K in argon atmosphere. The target is made up of a nickel disk on which small silver squares (1 emz) are pasted (a more detailed description is given in [3]). For electrical and Hall effect measurements the samples are provided with nickel electrodes (thickness 500 nm).…”

Section: Methodsmentioning

confidence: 99%