Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium

An integrated n-Si/BiVO4 photoelectrode with an interfacial bi-layer for unassisted solar water splitting

“… 66 The Al 2 O 3 interfacial layer shows high light transmittance (Fig. S11 † ) due to its large band gap (6.7 eV) 67 and thin thickness (2.5 nm), while other layers such as HfO 2 (5.8 eV), 68 ZrO 2 (4.9 eV) 69 and TiO 2 (3.3 eV) 70 may also be applicable if they could be deposited with a suitable structure for defect passivation within a thickness thin enough. Moreover, the PEC performance of the n-Si/Al 2 O 3 /ITO/BiVO 4 tandem photoanode can be adjusted by controlling the Al 2 O 3 thickness (Fig.…”

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

“…When the substrate temperature was increased to 450 °C, the GPC experiences a big jump and reaches a value of 0.18 nm/cycle. The higher GPC at a temperature of 100 °C may result from the precursor of TEMAH condensation or physical adsorption on the surface of the Si substrate under lower temperature [ 28 ]. Therefore, when the HfO 2 film is deposited at 100 °C, the surface reaction might deviate from the ideal ALD process, resulting in a higher GPC.…”

“…The growth of HfO 2 films at various growth temperatures has been investigated by many research groups. In 2015, J. Gao et al [ 28 ] reported that the grown temperature of HfO 2 film prepared by thermal ALD must be kept at 200–240 °C to acquire a stable deposition rate of about 1 Å/cycle and the films with higher electric constant. Sai Li et al [ 29 ] investigated structural and optical qualities of HfO 2 films through ALD by adjusting the substrate temperature between 170 °C and 290 °C.…”

Hardness, Modulus, and Refractive Index of Plasma-Assisted Atomic-Layer-Deposited Hafnium Oxide Thin Films Doped with Aluminum Oxide

“…It has been researched or applied as an optical coating, a dielectric material in capacitors, transistors, and processors; a material in bio-sensors, a resistive switching medium, ferroelectric or pyroelectric material, etc. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. Among other applications, such coatings could be used as optical interference filter material in lab-on-chip for targeted biological sensors [ 16 ].…”

“…Several different methods have been used to produce HfO 2 . For instance, hydrothermal or wet-chemical routes [ 8 , 9 , 19 ], magnetron sputtering [ 3 , 4 , 10 , 15 , 20 ] and atomic layer deposition (ALD) [ 1 , 5 , 7 , 8 , 21 , 22 ]. It has appeared as fibers [ 9 ], nanoparticles [ 19 ], and thin films [ 1 , 3 , 4 , 5 , 8 , 10 , 12 ].…”