Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator

Lee, Jae Bin; Kim, Hyeong Joon; Kim, Soo Gil; Hwang, Cheol Seong; Hong, Sung Je; Shin, Young Hwa; Lee, Neung Hun

doi:10.1016/s0040-6090(03)00347-x

Cited by 111 publications

(42 citation statements)

References 2 publications

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“…8 There is a significantly vibrant literature on ZnO channel TFTs deposited with different methods such as physical vapor deposition, chemical vapor deposition, chemical solution deposition, molecular beam epitaxy, and atomic layer deposition (ALD). [1][2][3][4][9][10][11][12] The on-to-off current ratios, I on /I off , of these devices range from 10 to 10 8 with reported electron mobility values between 0.031 and 56.43 cm 2 /V-s. 2,[13][14][15][16][17] Among all these techniques, ALD is promising due to the low growth temperature, large area uniformity, precise thickness control, highly conformal deposition, and scalability to roll-to-roll processes. Low temperature processing is very crucial for compatibility with flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Low temperature atomic layer deposited ZnO photo thin film transistors

Oruc¹,

Aygün²,

Dönmez³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society

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Section: Introductionmentioning

confidence: 99%

Low temperature atomic layer deposited ZnO photo thin film transistors

Oruc¹,

Aygün²,

Dönmez³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

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“…ZnO was extensively studied over the last decades with the aim of producing high-quality thin films for the fabrication of SAW and FBAR devices (Ferblantier et al, 2005;Huang et al, 2005;Lee et al, 2003). These kinds of devices exploit the piezoelectric properties of their active layers.…”

Section: X-ray Analysis On Zno Thin Filmsmentioning

confidence: 99%

“…Within this context, conventional surface acoustic wave (SAW) filters were gradually replaced by film bulk acoustic resonator (FBAR) devices. Their advantage in comparison with SAW devices resides in a higher quality factor (Lee et al, 2003) and lower fabrication costs (Huang et al, 2005). These kinds of devices are based on piezoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

X-Ray Analysis on Ceramic Materials Deposited by Sputtering and Reactive Sputtering for Sensing Applications

Gazia¹,

Chiodoni²,

Celasco³

et al. 2012

X-Ray Spectroscopy

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“…Two types of semiconductor materials that are widely used for this purpose are zinc oxide and stannic oxide [4]. Researchers have used ZnO in different forms, such as thick films, thin films, nanowires, nanoparticles and nanorods, depending on the application [5][6][7][8]. Many researchers are attracted to develop ZnO for monitoring systems due to its low cost, its mature synthesis technology, its tunable properties and large exiton binding (60 eV).…”

Section: B Introductionsmentioning

confidence: 99%

The Effect of Tin Addition to ZnO Nanosheet Thin Films for Ethanol and Isopropyl Alcohol Sensor Applications

Yuliarto

Julia

Wulan

et al. 2015

J. Eng. Technol. Sci.

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Abstract. The requirements of green environmental and public health monitoring have become stricter along with greater world attention for global warming. The most common pollutants in the environment that need tightened control are volatile organic compounds (VOC). Compared to other kinds of sensors, semiconductor sensors have certain advantages, including high sensitivity, fast response, simplicity, high reliability and low cost. In this work, ZnO and Sn-doped ZnO nanostructure materials with high surface nanosheet areas were synthesized using chemical bath deposition. The X-ray diffraction patterns could be indexed according to crystallinity mainly to a hexagonal wurzite ZnO structure. The scanning electron microscopy (SEM) results showed that in all samples, the thin films after the addition of Sn consisted of many kinds of microstructure patterns on a nanoscale, with various sheet shapes. The sensor performance characterizations showed that VOC levels as low as 3 vol% of isopropyl alcohol (IPA) and ethanol could be detected at sensitivities of 83.86% and 85.57%, respectively. The highest sensitivity of all sensors was found at an Sn doping of 1.4 at%. This high sensor sensitivity is a result of the high surface area and Sn doping, which in turn produced a higher absorption of the targeted gas.

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Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator

Cited by 111 publications

References 2 publications

Low temperature atomic layer deposited ZnO photo thin film transistors

Low temperature atomic layer deposited ZnO photo thin film transistors

X-Ray Analysis on Ceramic Materials Deposited by Sputtering and Reactive Sputtering for Sensing Applications

The Effect of Tin Addition to ZnO Nanosheet Thin Films for Ethanol and Isopropyl Alcohol Sensor Applications

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