Deposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques

Manhabosco, Taíse Matte; Müller, Ivan

doi:10.1007/s10853-009-3388-9

Cited by 15 publications

(4 citation statements)

References 46 publications

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“…In addition, from the simulations, we found that the crystalline structure that fitted our experimental values corresponded to a faced-centered cubic (fcc). Other groups have observed that cobalt electrodeposited films onto different substrates exhibited both, hexagonal close-packed (hcp) and faced-centered cubic (fcc) structures [37][38][39], where the final crystallographic hcp/fcc ratio depended on the bath conditions and substrate characteristics. Although the hcp texture is more stable at lower temperatures, the fcc structure predicted by our model can be explained in terms of the substrate crystallographic orientation, which possible induced an epitaxial growth in the early stages of cluster formation [7], and also, has a much lower magnetocrystalline anisotropy than the hcp [39].…”

Section: Resultsmentioning

confidence: 99%

Complementary atomic force microscopy and magnetic force microscopy study for the magnetic transition of cobalt clusters onto gold substrates

et al. 2019

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Atomic and magnetic force microscopy were employed in order to investigate the local magnetic state of individual cobalt clusters electrodeposited onto gold electrodes. The analysis indicated that the diameter of the clusters was similar regardless of the potential formation, or growth stage, but the height and surface coverage changed as the potential augmented. Individual examination of the clusters showed that the height determined the magnetic transition from the single to the multi domain state. By using a theoretical single-domain ferromagnetic model in terms of the clusters dimensions, the magnetic exchange constant at different potential voltages was obtained, which was higher than the cobalt bulk value. In addition, a micromagnetic simulation study was employed to validate the experimental results, and it correctly confirmed the experimental magnetic transition. In addition, a fcc crystalline structure and some insights of the clusters growth mechanism on the gold surface were inferred from the results.

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Section: Resultsmentioning

confidence: 99%

Complementary atomic force microscopy and magnetic force microscopy study for the magnetic transition of cobalt clusters onto gold substrates

et al. 2019

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“…Munford et al [15,19] also verified this high cathodic to anodic charge relation. Several authors mentioned this phenomenon [24] but do not further discuss it. We will do it in a future paper.…”

Section: Current-voltage Characteristicmentioning

confidence: 99%

“…The effect of numerous parameters has been checked: concentration of the Co ions in the bath [15], influence of the presence of a thin oxide layer on the surface of the Si substrate [23], influence of the pH that control the crystallographic structure (hcp or fcc) of the films [7], current density, or applied potential. Other works studied the effect of the selected electrodeposition techniques (galvanostatic and potentiostatic techniques) onto magnetic properties [24], or used pulsed deposition techniques to improve film quality and properties [25,26]. The resistivity of the silicon wafer plays also a rule [17] and surface roughness can be modified by adding a surfactant an additive like saccharin to the bath [18].…”

Section: Introductionmentioning

confidence: 99%

Potentiostatic controlled nucleation and growth modes of electrodeposited cobalt thin films on n-Si(1 1 1)

Mechehoud¹,

Khelil²,

Hakiki³

et al. 2016

Eur. Phys. J. Appl. Phys.

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The nucleation and growth of Co electrodeposits on n-Si(111) substrate have been investigated as a function of the applied potential in a large potential range using electrochemical techniques (voltammetry and chrono-amperometry) and surface imaging by Atomic Force Microscopy (AFM). The surface preparation of the sample is crucial and we achieve a controlled n-Si(111) surface with mono-atomic steps and flat terraces. We observe an increase of the Co yields in the electrodeposition process with the potential due to a lower contribution of hydrogen release at higher overpotentials. Using Scharifker-Hills models for fitting the current-time transients, we show that a transition from an instantaneous nucleation process to a progressive one occurs when the overpotential increases. We show A good agreement between the nucleation and growth parameters extracted from the models and the AFM data's is observed. The growth is of the Volmer-Weber type with a roughness and a mean diameter a spatial extension in the substrate plane of the deposited islands that increase with thickness.

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“…They have been used as active materials in sensors, as reflective and refractive coatings for optical elements, as protective and decorative films [7][8][9] and as Fischer-Tropsch catalysts [10]. A variety of approaches have been used to synthesise cobalt films such as thermal evaporation [11][12][13], electron beam evaporation [14][15][16], sputtering [17,18], electro-deposition [19,20] and chemical vapour deposition (CVD) [21][22][23]. The CVD technique offers potential for producing films with high uniformity of thickness, high purity, conformal step coverage, minimal substrate damage, high growth rates and the possibility for selected area growth.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Growth Behaviour of Cobalt Thin Films from Chemical Vapour Deposition, Using Directly Coupled X-ray Photoelectron Spectroscopy

Ngamou¹,

Kasmi²,

Weiss

et al. 2015

Zeitschrift Für Physikalische Chemie

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Thin films and coatings are a basis for many technological processes, including microelectronics, electrochemistry and catalysis. The successful deposition of metal films and nanoparticles by chemical vapour deposition (CVD) needs control over a number of physico-chemical processes such as precursor and substrate selection, delivery, temperature, pressure and flow conditions. Here, cobalt thin films were deposited by means of pulsed-spray evaporation chemical vapour deposition (PSE-CVD) from ethanol solutions of Co(acac) 2 and Co(acac) 3 on bare glass and silicon substrates. The physico-chemical properties of the grown films were characterised by XRD (X-ray diffraction), XPS (X-ray photoelectron spectroscopy) and HIM (helium ion microscopy). Co(acac) 2 enabled the growth of cobalt metal at lower temperatures than Co(acac) 3 . The difference in deposition Brought to you by | University of Windsor Authenticated Download Date | 9/29/15 1:02 AM 2 | K. Kohse-Höinghaus et al. temperature was attributed to the ability of ethanol to reduce Co(acac) 2 better than Co(acac) 3 . In addition, the film deposited from Co(acac) 2 exhibited a higher metal content and a less porous structure than that deposited from Co(acac) 3 . Increasing the substrate temperature enhanced the carbon content because of the thermal decomposition of both precursors. Using a nickel seed layer improved the growth rate until a critical temperature of 360 ∘ C, at which the thermal decomposition of the precursor becomes predominant. A decrease in the deposition temperature when using the nickel seed layer was only observed with Co(acac) 2 precursor; the growth behaviour under these conditions was monitored with a unique UHV-compatible PSE-CVD reactor directly attached to an XPS system and ascribed to an enhancement of its catalytic reduction by ethanol.

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Deposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques

Cited by 15 publications

References 46 publications

Complementary atomic force microscopy and magnetic force microscopy study for the magnetic transition of cobalt clusters onto gold substrates

Complementary atomic force microscopy and magnetic force microscopy study for the magnetic transition of cobalt clusters onto gold substrates

Potentiostatic controlled nucleation and growth modes of electrodeposited cobalt thin films on n-Si(1 1 1)

Investigation of the Growth Behaviour of Cobalt Thin Films from Chemical Vapour Deposition, Using Directly Coupled X-ray Photoelectron Spectroscopy

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