Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation

Virt, І. S.; Shkumbatyuk, T. P.; Курило, И. В.; Rudyi, I. O.; Lopatinskyi, T. Ye.; Linnik, L. F.; Tetyorkin, V. V.; Phedorov, A. G.

doi:10.1134/s1063782610040238

Cited by 14 publications

(7 citation statements)

References 8 publications

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“…These observations are also consistent with those reported in the literature. 32,33 Strikingly high charge carrier mobilities of more than 400 cm 2 V À1 s À1 have been achieved despite the polycrystalline nature of the film structure, exceeding mobilities of $350 cm 2 V À1 s À1 reported for epitaxially grown MOCVD thin films 61 and even that of single crystalline bulk materials of 313 cm 2 V À1 s À1 . 51 Due to the presence of a large number of Sb Te antisite defects for Sb 2 Te 3 bulk materials, the minimal carrier concentration is usually much larger (e.g.…”

Section: Dependence Of Electrical Properties On Te Contentmentioning

confidence: 99%

“…32 Virt et al have prepared high quality Bi 2 Te 3 and Sb 2 Te 3 films, which were claimed to be comparable to epitaxially grown ones, deposited on BaF 2 (111) substrates via a pulsed laser ablation method. 33 The recent advances in film growth of Bi 2 Te 3 and Sb 2 Te 3 and the resulting thermoelectric properties were recently reviewed in a comprehensive publication. 34 To date, there is only a limited amount of data of all transport properties measured on the same film samples 29,35 which is of great importance for the thermoelectric properties to be valid and comparable to that prepared in different approaches due to the substantial influences reported above introduced by synthesis conditions, morphology and crystallinity of samples.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and structural properties of Bi2Te3 and Sb2Te3 thin films grown by the nanoalloying method with different deposition patterns and compositions

et al. 2012

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Thin films of Bi2Te3 and Sb2Te3 were synthesized by the nanoalloying approach, which has recently been proven to yield VVI compounds with good thermoelectric properties and has several advantages over conventional growth on hot substrates. Firstly, repeating layers of the elements Bi, Sb and Te with a thickness in the range between 0.2 nm and 2.4 nm were deposited on BaF2 (111) substrates in an MBE system at room temperature with different deposition patterns for different samples, i.e. in bilayer and quintuple stacks, with different starting layer thicknesses and different Te contents. Subsequently, the element layer stacks were annealed in order to induce crystallization and compound formation of Bi2Te3 and Sb2Te3 thin films. The annealed thin films were characterized using X-ray diff ractometry (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The transport properties, i.e. electrical conductivities, carrier concentrations, carrier mobilities, Seebeck coefficients and thermal conductivities, were determined at room temperature for several sets of starting layer thicknesses and deposition patterns depending on the Te content. The texture was found to be strongly influenced by the starting thicknesses of the elemental layers in the deposition pattern. Results of temperature dependent measurements of the Seebeck coefficient and electrical conductivity on one sample of nanoalloyed Bi2Te3 and Sb2Te3 together with results from temperature dependent in situ XRD investigations are presented

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Section: Dependence Of Electrical Properties On Te Contentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical and structural properties of Bi2Te3 and Sb2Te3 thin films grown by the nanoalloying method with different deposition patterns and compositions

et al. 2012

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“…The latter substrates were prepared by depositing an Si 3 N 4 buffer layer on Si(111) by PLD. [10][11][12] The Si 3 N 4 layer thickness was 110 nm. The thickness of each lead chalcogenide film was 2 lm.…”

Section: Methodsmentioning

confidence: 99%

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Virt

Rudyi

Lopatynskyi

et al. 2016

Journal of Elec Materi

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Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al 2 O 3 ) and on Si covered with a Si 3 N 4 buffer layer. The Si 3 N 4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si 3 N 4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

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“…I. S Virt et al [11] measured the resistivity of both Bi 2 Te 3 and Sb 2 Te 3 thin films deposited at different substrate temperatures, for different deposition times, and with different thicknesses. Even though many resistivity studies have been in the literature, to the best of our knowledge, no impedance spectra studies for Bi 2 Te 3 and Sb 2 Te 3 thin films have been reported.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the electrical properties of PLD-grown Bi<inf>2</inf>Te<inf>3</inf> and Sb<inf>2</inf>Te<inf>2</inf>

Shaik

Motaleb

2013

IEEE International Conference on Electro-Information Technology , EIT 2013

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Bismuth Telluride (Bi 2 Te 3 ) and Antimony Telluride (Sb 2 Te 3 ) were deposited using pulsed laser deposition (PLD) in the presence of Argon gas. The substrate temperature (T) was varied from 25 °C to 450 °C. Impedance spectroscopy and four point probe techniques were used to characterize the electrical properties of the films. Nyquist plots were obtained from these measurements for all the films, and an equivalent circuit model was developed to fit the experimental data. It was found that the values of series resistance obtained from the impedance spectroscopy are consistent with the values of the sheet resistance obtained from the four point probe instrument. The extracted values of the circuit elements explain the role of the grain boundary in determining the film impedance.

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Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation

Cited by 14 publications

References 8 publications

Electrical and structural properties of Bi2Te3 and Sb2Te3 thin films grown by the nanoalloying method with different deposition patterns and compositions

Electrical and structural properties of Bi2Te3 and Sb2Te3 thin films grown by the nanoalloying method with different deposition patterns and compositions

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Investigation of the electrical properties of PLD-grown Bi<inf>2</inf>Te<inf>3</inf> and Sb<inf>2</inf>Te<inf>2</inf>

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