Deposition of Tantalum Films with an Open-Ended Vacuum System

Abstract

New devices using vacuum‐deposited metal films require a high‐speed, low‐cost method of vacuum deposition. The capability of the open‐ended multiple‐chamber deposition equipment has been investigated to determine its suitability for depositing tantalum nitride thin films. This was accomplished by examining the measurable electrical properties of the deposited film and by determining the stability of resistors made from these films. Tantalum films produced by the open‐ended deposition system were found comparable to those produced by many bell‐jar systems. It was possible to control the addition of nitrogen to the films, and tantalum nitride films of satisfactory stability were obtained. Because the open‐ended deposition method can produce large quantities of suitable thin films, it is expected that this will be an important process in the manufacture of future products.