1992
DOI: 10.1016/0040-6090(92)90512-a
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Deposition of smooth, oriented diamond films using microwave plasma chemical vapor deposition

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Cited by 28 publications
(13 citation statements)
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“…With little or no Ar addition, the mainly H 2 atmosphere produced diamond powder with well‐defined, micro‐scale facetted crystallites. [ 32 ] This is consistent with what is known [ 33,34 ] about the mechanisms for the growth of diamond via CVD, which relies on a high ratio of H atoms to carbon radical species (H: C x H y ) near the surface to deposit sp 3 diamond rather than sp 2 graphitic carbon. In our CVD system, the graphite disks act as the carbon source, which is etched by H atoms to form the gas‐phase CH 3 radicals responsible for diamond growth.…”
Section: Resultssupporting
confidence: 88%
“…With little or no Ar addition, the mainly H 2 atmosphere produced diamond powder with well‐defined, micro‐scale facetted crystallites. [ 32 ] This is consistent with what is known [ 33,34 ] about the mechanisms for the growth of diamond via CVD, which relies on a high ratio of H atoms to carbon radical species (H: C x H y ) near the surface to deposit sp 3 diamond rather than sp 2 graphitic carbon. In our CVD system, the graphite disks act as the carbon source, which is etched by H atoms to form the gas‐phase CH 3 radicals responsible for diamond growth.…”
Section: Resultssupporting
confidence: 88%
“…The XRD pattern of a representative diamond film prepared by magnetron sputtering of a vitreous carbon target is shown in figure 1. Strong reflections from (111), (220) and (311) planes could be observed for films deposited on molybdenum and mica substrates kept at -900-1200 K during deposition, The above feature compared well with those observed by Celii et al (1992) and Guo and Yu (1992) for diamond films grown by CVD on silicon and molybdenum substrates. The:lattice constant (a) evaluated from XRD studies was equal to 0.3583 nrn which compared well ~¢ith that obtained by Sawabe and Inuzuka (1986).…”
Section: Structural Studiessupporting
confidence: 71%
“…NCD films exhibit a continuous variation in material properties and defect concentrations which depend on the growth methods, reactant species, substrate temperature, and reactor pressure. The methods include plasma-enhanced (PE)CVD (microwave, [9,12,[14][15][16]20,21,78,84,85] electron cyclotron resonance, [23][24][25] DC glow discharge, [86,87] and hot filament-assisted CVD. [88][89][90][91][92] In Table 1 several subclasses of NCD were identified based on the use of higher methane concentrations (1-4% CH 4 in H 2 ), [74] biased plasma (energetic ion flux), [77,78] nitrogen addition, [82,93] and very low CH 4 concentrations (0.1 to 0.5% CH 4 in H 2 ).…”
Section: Historical Overviewmentioning
confidence: 99%